Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

Abstract

The effects of oxidation and nitridation temperatures (500-1100°C) on metal-oxide-semiconductor characteristics of sputtered Zr thin film on Si in N2O ambient have been systematically investigated. The sample being oxidized and nitrided at 700°C has demonstrated the highest effective dielectric constant of 21.82 and electrical breakdown field of 13.6 MV cm −1 at a current density of 10 −6 A cm −2 . This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density of the oxide and the highest barrier height of conduction band offset between the oxide and semiconductor when compared with others.

Surface Roughness-Induced Changes in Important Physical Features of CoFeSm Thin Films on Glass Substrates during Annealing

“…As the annealing temperature increases, there is a significant reduction in magnetic anisotropy, complicating the task of meeting the hightemperature requirements for these magnetic devices [11][12][13]. Introducing a third element is one viable approach to improving the thermal stability of CoFe alloys [14]. CoFe thin films find widespread applications in magnetic materials and magnetic storage systems [15,16].…”