Effects of O<sub> 2</sub>/Ar Ratio and Annealing on the Properties of    (Ba,Sr)TiO<sub> 3</sub> Films  Prepared by RF Magnetron Sputtering

Lee, Joon; Choi, Young‐Chul; Lee, Byung-Soo

doi:10.1143/jjap.36.3644

Cited by 31 publications

(15 citation statements)

References 16 publications

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“…According to J. Lee et al, the grain size of BST films increased as the O 2 content of the sputtering gas increased [18]. In our previous work, it was found that the dielectric constant and tunability increased with the increasing grain size [16].…”

Section: Sputtering Gasmentioning

confidence: 77%

RF MAGNETRON SPUTTERING CONDITION DEPENDENCES OF DIELECTRIC NON-LINEARITY OF Ba_0.6Sr_0.4TiO₃ THIN FILMS

Chen

Yang

et al. 2007

Integrated Ferroelectrics

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Barium strontium titanate (Ba 0.6 Sr 0.4 TiO 3 , short for BST) thin films were prepared by RF-magnetron sputtering. The influences of deposition conditions, such as sputtering power, deposition pressure and sputtering gas, on the microstructures and dielectric non-linearity of BST thin films were investigated. The results show that both dielectric constant and tunability of BST films increase and then decrease as the sputtering power increases. Moreover, the tunability increases as O 2 :Ar ratio increases from 1:1 to 8:1. Not only the ratios of (Ba+Sr)/Ti and Ba/Sr but also the RMS roughness increases with increasing deposition pressure.

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Section: Sputtering Gasmentioning

confidence: 77%

RF MAGNETRON SPUTTERING CONDITION DEPENDENCES OF DIELECTRIC NON-LINEARITY OF Ba_0.6Sr_0.4TiO₃ THIN FILMS

Chen

Yang

et al. 2007

Integrated Ferroelectrics

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“…Both pores and protrusions seem to contribute to the detected leakage currents at a high bias of 6 V. The surface morphology of the STO/RuO 2 film grown at 500 1C is rougher than those of the STO/Pt and STO/LNO films. The increase in the leakage currents of the STO/RuO 2 film may be associated with the rough structure between the insulator and the bottom electrode [20]. Fig.…”

Section: Resultsmentioning

confidence: 97%

Effect of conductive oxide buffering on structural and nanoscale electrical properties of ultrathin SrTiO3 films on Pt electrodes

Liang

2010

Journal of Crystal Growth

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“…11 The leakage current of the dielectric oxide which increases with the roughness of the interface between the insulator and the bottom electrode has been reported. 16 The above SIMS analysis reveals that the relatively rough interface of BFO/Pt at 550°C may also be responsible for the poor electric performance. A trace amount of leakage spots was found for the BFO/Pt film grown at 450°C at a bias of 2 V. As the bias is increased to 4 V, the original leaky spots that were formed at 2 V dilated because increasing the applied voltage broadened the tunneling area of the electrons, increasing the lateral dimensions of the current spots.…”

Section: Methodsmentioning

confidence: 93%

Enhancement of Nanoscale Leakage Current Performance of Bismuth Ferrite Thin Films Using Conductive Oxide Electrodes

Liang

2009

J. Electrochem. Soc.

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Thin BiFeO 3 ͑BFO͒ films with a thickness of 80 nm were grown on Pt/Ti/SiO 2 /Si͑100͒ substrates at 350-550°C with and without a 100 nm thick LaNiO 3 ͑LNO͒ buffer. The growth of the BFO film with an LNO buffer promotes the appearance of highly ͑100͒-crystallographic features. A high deposition temperature of 550°C yields BFO films with secondary phases. Secondary-ion mass spectrometry depth profiles show no obvious interdiffusion of constituent elements between the BFO and the LNO at growth temperatures of 350-450°C. The buffering of LNO markedly reduces the degree of the surface roughening of BFO films, which is determined by the growth temperature. The spatial distribution of the current image of BFO films grown at 350-450°C on the nanometer scale shows a considerable reduction in the nanostructural leakage current properties of BFO films upon the buffering of LNO because of the effective improvement in the film/electrode interface, chemical homogeneity, crystallinity, and surface roughness of the BFO films. Moreover, impurity phases in the BFO films grown at 550°C act as the dominant conduction path of leakage currents.Enhanced remnant polarization and magnetization compared to a bulk single crystal have been reported in BiFeO 3 ͑BFO͒ thin films. 1,2 Multiferroic BFO thin films are considered among the most promising candidates for ferroelectric random access memories and microelectromechanical systems. The trend toward miniaturization of devices depends on the thinning of films. However, realizing BFO thin films, especially those with a film nanoscale thickness, with the most desired and reproducible electrical properties remains a considerable challenge. 2 Pt is mostly used as an electrode material in ferroelectric capacitors, providing low resistivity and high chemical stability. 3 However, the use of Pt electrodes in the preparation of the ferroelectric layer at a relatively high temperature has some shortcomings. The interface layer caused by atomic interdiffusion and the hillocks are the most important issues. Composite electrodes were recently demonstrated to be effective in enhancing the electrical or crystalline properties of high permittivity oxides from the crystallographic or chemical compatible points. 4,5 Increasing the electrical resistivity of BFO films is very important, and several approaches have been employed to improve their electrical properties, including impurity doping and the use of oxide electrodes. 6,7 Notably, although many efforts have been made to reduce the leakage current in the BFO thin films, understanding leakage phenomena in BFO thin films would benefit greatly from the detection of a leakage current at a spatial resolution that is similar to the length scale of the structural nonuniformities. Such understanding could be exploited in applying BFO thin films in nanodevices. Leakage currents are conventionally measured at microscopic metal-insulator-metal capacitors. 8 Based on this method, the nanoscopic spatial distribution of the leakage current of the insulator layer cann...

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Effects of O₂/Ar Ratio and Annealing on the Properties of (Ba,Sr)TiO₃ Films Prepared by RF Magnetron Sputtering

Cited by 31 publications

References 16 publications

RF MAGNETRON SPUTTERING CONDITION DEPENDENCES OF DIELECTRIC NON-LINEARITY OF Ba_0.6Sr_0.4TiO₃ THIN FILMS

RF MAGNETRON SPUTTERING CONDITION DEPENDENCES OF DIELECTRIC NON-LINEARITY OF Ba_0.6Sr_0.4TiO₃ THIN FILMS

Effect of conductive oxide buffering on structural and nanoscale electrical properties of ultrathin SrTiO3 films on Pt electrodes

Enhancement of Nanoscale Leakage Current Performance of Bismuth Ferrite Thin Films Using Conductive Oxide Electrodes

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Effects of O 2/Ar Ratio and Annealing on the Properties of (Ba,Sr)TiO 3 Films Prepared by RF Magnetron Sputtering

Cited by 31 publications

References 16 publications

RF MAGNETRON SPUTTERING CONDITION DEPENDENCES OF DIELECTRIC NON-LINEARITY OF Ba0.6Sr0.4TiO3 THIN FILMS

RF MAGNETRON SPUTTERING CONDITION DEPENDENCES OF DIELECTRIC NON-LINEARITY OF Ba0.6Sr0.4TiO3 THIN FILMS

Effect of conductive oxide buffering on structural and nanoscale electrical properties of ultrathin SrTiO3 films on Pt electrodes

Enhancement of Nanoscale Leakage Current Performance of Bismuth Ferrite Thin Films Using Conductive Oxide Electrodes

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Effects of O₂/Ar Ratio and Annealing on the Properties of (Ba,Sr)TiO₃ Films Prepared by RF Magnetron Sputtering

RF MAGNETRON SPUTTERING CONDITION DEPENDENCES OF DIELECTRIC NON-LINEARITY OF Ba_0.6Sr_0.4TiO₃ THIN FILMS

RF MAGNETRON SPUTTERING CONDITION DEPENDENCES OF DIELECTRIC NON-LINEARITY OF Ba_0.6Sr_0.4TiO₃ THIN FILMS