Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy

Park, Mun‐Do; Min, Jung‐Wook; Lee, Jun Yeob; Hwang, Ho-Young; Kim, Cihyun; Kang, Seok-Jίn; Kang, Chang‐Mo; Park, Jeong‐Hwan; Jho, Young‐Dahl; Lee, Dong-Seon

doi:10.1016/j.jcrysgro.2019.125233

Cited by 4 publications

(2 citation statements)

References 48 publications

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“…The early efforts of growing AlGaN nanowires using such large-scale epitaxy tools can be dated back to around 2000, when AlGaN nanowires with low Al contents were first investigated by MBE [46,47]. These early efforts were followed by tremendous efforts from a large number of groups who have been working on the epitaxial growth of AlGaN nanowires (primarily by MBE) [25,28,[48][49][50][51][52][53][54]. In these studies, the AlGaN nanowires are typically spontaneously formed on 2-inch or 3-inch Si substrates under the nitrogen rich conditions, with the help of GaN nanowire template.…”

Section: Mbe and Mocvdmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.

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Section: Mbe and Mocvdmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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“…Nitrogen is a crucial atom in many material deposition applications, from III-V nitride semiconductors such as GaN, AlGaN or InGaN [1][2][3] , used in microelectronics and photonics 4,5 , to nitrogen-doped diamond and NV centers for quantum application 6 , and hexagonal boron nitride (h-BN) as a substrate for graphene based technologies 7,8 . Synthesis of such materials requires sources of nitrogen (N) atoms that can produce high densities over large surfaces, most of the time at low pressure to promote surface mobility at the substrate where the growth occurs.…”

Section: Introductionmentioning

confidence: 99%

Absolute N-atom density measurement in an Ar/N2 micro-hollow cathode discharge jet by means of ns-two-photon absorption laser-induced fluorescence

et al. 2022

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In this work, nanosecond two-photon absorption laser-induced fluorescence (TALIF) is used to probe the absolute density of nitrogen atoms in a plasma generated using a micro-hollow cathode discharge (MHCD). The MHCD is operated in the normal regime, and the plasma is ignited in an Ar/N2 gas mixture. First, we study a MHCD configuration having the same pressure (50 mbar) on both sides of the electrodes. A good agreement is found between the density of N atoms measured using TALIF in this work and previous measurements using vacuum ultraviolet Fourier transform absorption spectroscopy. Then, we introduce a pressure differential between the two electrodes of the MHCD, creating a plasma jet. The influence of the discharge current, the percentage of N2 in the gas mixture, and pressures on both sides of the MHCD is studied. The current has a small impact on the N-atom density. Furthermore, an optimal N-atom density is found at around 95% of N2 in the discharge. Finally, we demonstrate that the pressure has a different impact depending on the side of the MHCD: the density of N atoms is much more sensitive to the change of the pressure in the low-pressure side when compared to the pressure change in the high-pressure side. This could be due to several competing phenomena: gas residence time in the cathodic region, recirculation, or recombination of the N atoms at the wall. This study contributes to the optimization of MHCD as an efficient N-atom source for material deposition applications.

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Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model

Thomas,

Ferreyra,

Quiroga

2024

Applied Surface Science

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Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy

Cited by 4 publications

References 48 publications

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Absolute N-atom density measurement in an Ar/N2 micro-hollow cathode discharge jet by means of ns-two-photon absorption laser-induced fluorescence

Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model

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