Effects of nitrogen doping of ZnO during or after deposition

Yen, Tingfang; DiNezza, Michael J.; Haungs, Alan; Kim, Sung Jin; Anderson, Wayne A.; Cartwright, Alexander N.

doi:10.1116/1.3167363

Cited by 9 publications

(6 citation statements)

References 23 publications

(13 reference statements)

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“…One possible reason of this may be that the energy of implanted ions is transferred to the unimplanted ZnO layer. Yen et al [14] reported that nitrogen doping provided better crystal quality of ZnO films. However, this is different from the reported results of Wang et al [15].…”

Section: Resultsmentioning

confidence: 99%

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The photoluminescence and magnetism of nitrogen-implanted ZnO

Zhang

et al. 2011

Phys. Scr.

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Single crystal ZnO was implanted using nitrogen ions with an energy of 60 keV. The microstructure, photoluminescence (PL) and magnetism were studied in detail. Except for nitrogen, no other impurity can be detected by x-ray photoelectron spectra measurements. The room temperature PL of pure ZnO consists of a weak ultraviolet (UV) emission band and a strong green emission band. The PL and electrical conductivity can be suppressed by nitrogen implantation or by annealing in air. However, the two emission bands of pure ZnO can be enhanced intensively by Ar + etching. The PL is related to the structure defects. Moreover, the intensity of UV luminescence is likely correlated to the electrical conductivity. Ferromagnetism cannot be obtained in the nitrogen-implanted sample from 77 to 300 K. The absence of ferromagnetism in nitrogen-implanted ZnO may be because there is no strong interaction between N 2p and O 2p electrons as nitrogen is a deep acceptor in ZnO.

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Section: Resultsmentioning

confidence: 99%

“…Besides the magnetism, the photoluminescence (PL) and electrical conductivity of nitrogen-doped ZnO were also intensively investigated [14][15][16][17][18][19][20][21]. Recently reported results [21] indicate that nitrogen dopant cannot induce p-type conductivity in ZnO as it is a deep acceptor in ZnO.…”

Section: Introductionmentioning

confidence: 99%

The photoluminescence and magnetism of nitrogen-implanted ZnO

Zhang

et al. 2011

Phys. Scr.

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“…However, the main drawback of the MSM-PD is high dark current due to the Schottky barrier junction. In this paper, we have reached lower dark current of MSM-PDs by adopting various post-processing steps to modify the properties of ZnO thin films [2,3] and in addition, have investigated the current transport mechanisms of MSM-PDs.…”

Section: Introductionmentioning

confidence: 99%

Current Transport Mechanisms for MSM-Photodetectors on ZnO:N Thin Films

et al. 2009

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Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N + ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 A/W; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J~V m gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes..

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“…It is well known that adulteration is one of the effective ways to modulate the performance of ZnO nanomaterials, furthermore, the intrinsic ZnO nanomaterials are favorable for energy and photoelectric devices [13][14][15][16]. There are many studies on the properties of Zno nanowires based on first-principles calculations, including native point defects, magnetic and optical properties [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Temperature- and diameter-dependent electrical conductivity of nitrogen doped ZnO nanowires

et al. 2019

Eur. Phys. J. B

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A modified formula to calculate the axial conductivity of nanowires was proposed based on the one-dimensional quantum state density distribution and Boltzmann transport theory. Numerical simulations of the ZnO nanowires (ZnONWs) and Nitrogen-doped ZnO nanowires (N-ZnONWs) were implemented using data from the first principles calculation. The results indicate that ZnONWs are lowconductivity wide band-gap semiconductors owing to their low carrier concentrations at room temperature, with N-doping increasing the conductivity. The N-ZnONWs carrier concentrations increased with increasing temperature, and possessed significantly higher carrier concentrations than ZnONWs. With an increase in diameter, the ZnONWs conductivities increased, whereas the N-ZnONWs conductivities decreased.

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Effects of nitrogen doping of ZnO during or after deposition

Cited by 9 publications

References 23 publications

The photoluminescence and magnetism of nitrogen-implanted ZnO

The photoluminescence and magnetism of nitrogen-implanted ZnO

Current Transport Mechanisms for MSM-Photodetectors on ZnO:N Thin Films

Temperature- and diameter-dependent electrical conductivity of nitrogen doped ZnO nanowires

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