2017
DOI: 10.1016/j.ijhydene.2016.12.141
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Effects of NiO-loading on n-type GaN photoanode for photoelectrochemical water splitting using different aqueous electrolytes

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Cited by 22 publications
(19 citation statements)
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“…The photocurrents were continuously monitored under illumination at 0.5 V for 60 min, as shown in Figure d. For the composite porous GaN, the initial photocurrent is ∼0.41 mA/cm 2 , which slightly decreases to ∼0.33 mA/cm 2 with a degeneration rate of 1.3 μA/cm 2 min –1 because of the photocorrosion caused by UV light and applied voltage. , Although the photocurrent initially decreased for the composite porous GaN compared with the other two samples, according to our measurement for a longer period, the decrease became slow with further increasing the time, and this composite structure can still possess the best performance after 3 h. The photocorrosion can be reduced by reducing the applied voltage and the electrolyte concentration, and a high stability with good performance was also observed in the composite porous GaN (Figure S2). The good stability of the composite porous GaN compared to other untreated nanostructured GaN , is due to the low porosity of the laterally porous GaN and the low-damage ICP etching for vertical nanoholes.…”
Section: Resultsmentioning
confidence: 71%
“…The photocurrents were continuously monitored under illumination at 0.5 V for 60 min, as shown in Figure d. For the composite porous GaN, the initial photocurrent is ∼0.41 mA/cm 2 , which slightly decreases to ∼0.33 mA/cm 2 with a degeneration rate of 1.3 μA/cm 2 min –1 because of the photocorrosion caused by UV light and applied voltage. , Although the photocurrent initially decreased for the composite porous GaN compared with the other two samples, according to our measurement for a longer period, the decrease became slow with further increasing the time, and this composite structure can still possess the best performance after 3 h. The photocorrosion can be reduced by reducing the applied voltage and the electrolyte concentration, and a high stability with good performance was also observed in the composite porous GaN (Figure S2). The good stability of the composite porous GaN compared to other untreated nanostructured GaN , is due to the low porosity of the laterally porous GaN and the low-damage ICP etching for vertical nanoholes.…”
Section: Resultsmentioning
confidence: 71%
“…Another common method named metal–organic chemical vapor deposition strategy was applied to deposit NiO onto GaN. The band alignment between them offered efficient carrier separation and fast hole transport, making its PEC performance significantly outperform that of pure GaN . Besides, an n‐silicon photoanode coated by a NiO x layer was successfully synthesized via a pulsed laser deposition method for efficient PEC oxygen evolution .…”
Section: Cocatalysts For Photoanodes: Construction and Regulationmentioning
confidence: 99%
“…Several protective layers and catalysts have been tested for such photoanodes to suppress photocorrosion. [ 17–25 ] In particular, the loading of p‐type NiO cocatalysts enhances the stability of GaN during the oxygen evolution reaction (OER). [ 19–25 ] However, the mechanism of the protection against photocorrosion is not well understood.…”
Section: Figurementioning
confidence: 99%