Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 film

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 ı C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

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Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 film

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Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 film

Abstract: Articles you may be interested inEffect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate J.Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma

Cited by 6 publications

References 22 publications

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The role of oxygen plasma in the formation of oxygen defects in HfO_x films deposited at room temperature