Effects of N2 and O2 annealing on the multianalyte biosensing characteristics of CeO2-based electrolyte–insulator–semiconductor structures

Kao, Chiang; Chen, Hsiang; Lee, Ming Ling; Liu, Che Chun; Ueng, Herng-Yih; Chu, Yu Cheng; Chen, Ching Bang; Chang, Kang-Ming

doi:10.1016/j.snb.2013.12.103

Cited by 32 publications

(16 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Since the sensing membrance in the ISFET-based devices plays a major role in the sensing performance, new materials, alternative processes or unconventional treatment have been tried to boost the sensing behaviors. Among novel materials, Nb 2 O 5 5 , CeO 2 6 , and Sm 2 O 3 7 have been demonstrated as good sensing film materials and the experimental data approve that the ISFET-based sensors incorporating some materials can achieve excellent sensing capability. Futhermore, on the other hand, zooming in the chemical solution/membrance interface can study the subtle membrance material morphologies and characteristics of different materials and gain insight to the interactions between the ions and the surface of various kinds of materials 8 .…”

Section: Introductionmentioning

confidence: 77%

Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment

Kao

Chang

et al. 2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

Magnesium oxide (MgO) sensing membranes in pH-sensitive electrolyte-insulator-semiconductor structures were fabricated on silicon substrate. To optimize the sensing capability of the membrane, CF4 plasma was incorporated to improve the material quality of MgO films. Multiple material analyses including FESEM, XRD, AFM, and SIMS indicate that plasma treatment might enhance the crystallization and increase the grain size. Therefore, the sensing behaviors in terms of sensitivity, linearity, hysteresis effects, and drift rates might be improved. MgO-based EIS membranes with CF4 plasma treatment show promise for future industrial biosensing applications.

show abstract

Section: Introductionmentioning

confidence: 77%

Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment

Kao

Chang

et al. 2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…In contrast, for pH-sensitivities of less than 59 mV/pH, more than one electron would be transferred per proton. In this study, our CeY x O y films exhibited sensitivities to pH that are superior to those of sensing materials commonly used for ISFET and EIS sensors such as, Nb 2 O 5 (52.12 mV/pH) 49 , Y 2 O 3 (54.5 mV/pH) 12 , CeO 2 (58.76 mV/pH) 26 , ZnO 2 (58 mV/pH) 50 , Pr 2 O 3 (52.9 mV/pH) 16 , Nd 2 O 3 (56.01 mV/pH) 17 , Sm 2 O 3 (56.2 mV/pH) 18 , Er 2 O 3 (57.58 mV/pH) 19 , and Eu 2 Ti 2 O 7 (59.03 mV/pH) 29 .…”

Section: Resultsmentioning

confidence: 82%

“… 23 also demonstrated that the nanostructured CeO 2 film was deposited on Au electrode using the sol-gel method for glucose sensor. Besides the above properties, they possess a high dielectric constant, a small lattice mismatch with silicon, and good thermodynamic stability in contact with silicon, making them particularly attractive materials for use as alternative gate dielectrics in nano-CMOS, flash memory, and EIS devices 24 – 26 . The major concern when using RE oxide films as sensing membranes, however, is prone to moisture absorption due to their hygroscopic nature, which degrades permittivity through the formation of low-permittivity hydroxides.…”

Section: Introductionmentioning

confidence: 99%

Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors

Pan

Wang

Chen

2017

Sci Rep

View full text Add to dashboard Cite

In this study we developed CeYxOy sensing membranes displaying super-Nernstian pH-sensitivity for use in electrolyte–insulator–semiconductor (EIS) pH sensors. We examined the effect of thermal annealing on the structural properties and sensing characteristics of the CeYxOy sensing membranes deposited through reactive co-sputtering onto Si substrates. X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy revealed the structural, morphological, and chemical features, respectively, of the CeYxOy films after their annealing at 600–900 °C. Among the tested systems, the CeYxOy EIS device prepared with annealing at 800 °C exhibited the highest sensitivity (78.15 mV/pH), the lowest hysteresis voltage (1.4 mV), and the lowest drift rate (0.85 mV/h). Presumably, these annealing conditions optimized the stoichiometry of (CeY)O2 in the film and its surface roughness while suppressing silicate formation at the CeYxOy–Si interface. We attribute the super-Nernstian pH-sensitivity to the incorporation of Y ions in the Ce framework, thereby decreasing the oxidation state Ce (Ce4+ → Ce3+) and resulting in less than one electron transferred per proton in the redox reaction.

show abstract

“…To overcome these problems, several metal oxide materials, such as ITO, CeO 2 , and Nb 2 O 5 , have been extensively investigated for bio-sensor applications, owing to their excellent pH sensitivity [3][4][5]. The Zine oxide (ZnO), an n-type semiconductor material with wurtzite structure, has a band gap of (E g ) 3.3 eV [6].…”

Section: Introductionmentioning

confidence: 99%

NH3 Plasma-Treated Magnesium Doped Zinc Oxide in Biomedical Sensors with Electrolyte–Insulator–Semiconductor (EIS) Structure for Urea and Glucose Applications

et al. 2020

View full text Add to dashboard Cite

This study compared the sensing characteristics of ZnO (ZO) treated with ammonia (NH3) plasma for 1 min, 3 min, and 6 min, under the EIS structure. The measurement results revealed that, after 3 min of NH3 plasma treatment, the Mg-doped ZnO (MZO) sensing film had a high hydrogen ion sensitivity, linearity, hysteresis, and drift rate of 53.82 mV/pH, 99.04%, 2.52 mV, and 1.75 mV/h, respectively. The sensing film was used with sodium and potassium ion solutions, and it performed satisfactorily in sensing hydrogen ions. Additionally, we investigated the biomedical sensing properties of Mg-doped ZnO (MZO) sensing film with regard to urea, creatinine, and glucose solutions and found that the Mg-doped ZnO (MZO) sensing film treated with NH3 plasma for 3 min had the best properties for sensing urea, creatinine, and glucose. Specifically, with glucose, the sensing film achieved the best linearity and sensitivity and of 97.87% and 10.73 mV/mM, respectively. The results revealed that the sensing characteristics varied with the processing environment and are useful in the developing biomedical sensing applications with different sensing elements.

show abstract

Effects of N2 and O2 annealing on the multianalyte biosensing characteristics of CeO2-based electrolyte–insulator–semiconductor structures

Cited by 32 publications

References 27 publications

Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment

Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment

Structural Properties and Sensing Performance of CeYxOy Sensing Films for Electrolyte–Insulator–Semiconductor pH Sensors

NH3 Plasma-Treated Magnesium Doped Zinc Oxide in Biomedical Sensors with Electrolyte–Insulator–Semiconductor (EIS) Structure for Urea and Glucose Applications

Contact Info

Product

Resources

About