Effects of N2 addition on density and temperature of radicals in 60MHz capacitively coupled c-C4F8 gas plasma

Abstract

Articles you may be interested inEffects of water addition on OH radical generation and plasma properties in an atmospheric argon microwave plasma jet Characterization of the behavior of chemically reactive species in a nonequilibrium inductively coupled argonhydrogen thermal plasma under pulse-modulated operation Behaviors of electrons and fluorocarbon radicals were investigated in 60 MHz capacitively coupled plasma employing mixture gases of c-C 4 F 8 , Ar, and N 2 . Optical emission spectroscopy was applied to measurements of the rotational temperatures of CF radical and N 2 molecule, and infrared diode laser absorption spectroscopy was applied to that of the densities of CF and CF 2 radicals. The electron density was decreased from 7.3ϫ 10 10 to 3.0ϫ 10 10 cm −3 , and electron temperature was increased from 3.0 to 5.1 eV with increasing N 2 flow rate. The addition of N 2 to Ar/ C 4 F 8 plasma decreased the density of CF radical dominantly as compared with CF 2 radical. The rotational temperatures of CF radical were estimated from the ͑1-2͒ band of B 2 ⌬ -X 2 ⌸ electronic transition of CF radicals. It was found that the rotational temperatures of CF radicals were increased with increasing N 2 flow rate. The temperatures of radical indicated the different behaviors from the temperatures of N 2 molecule. The rotational temperature of CF radical has a good relation with the electron temperature.

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“…Two photon excitations are used to detect of fluorescence that arises from atomic species such as O and Cl. 22,[27][28][29] VUVAS is used for the quantitative measurement of atomic species such as H, O, N, and C. [31][32][33][34][35][36][37][38][39] The energies for the optical transition from the ground level to the excited level of atomic species are in the range of VUV (wavelengths shorter than 200 nm). For measurements in the VUV range, a setup that eliminates atmospheric absorption is used.…”

Effects of feedstock availability on the negative ion behavior in a C4F8 inductively coupled plasma

“…We believe that this assumption will not strongly influence the main characteristics of this fc plasma source, since many experiments already revealed that light fc neutrals indeed dominate over heavy polymeric species in a C 4 F 8 plasma. [33][34][35][36] The F and CF 3 neutrals will recombine with themselves after sticking on the surface and return into the…”

Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

“…10) Furthermore, the addition of nitrogen (N 2 ) instead of oxygen (O 2 ) gas to fluorocarbon plasmas has been reported to be advantageous since p-SiOCH films would be damaged by vacuum ultraviolet (VUV) emissions and neutrals of oxidative species in the case of O 2 addition. [11][12][13][14] In fluorocarbon plasma etching, CF 3 þ ions play a key role in minimizing any damage caused by ion bombardment, in conjunction with ion energy and etching yield, since a low incident energy would be possible because of high etching yields obtained even at low bombardment energies. 15) Previously, Nagai et al proposed the use of perfluoro-…”

“…wafers. 14) The chamber was 40 cm in diameter and 30 cm in height. The distance between the upper electrode and the substrate was 3.5 cm.…”