Effects of N/Si ratio on mechanical properties of amorphous silicon nitride coating

Abstract

The utilization of silicon nitride coatings has been proposed as an effective method to enhance wear resistance and mitigate the release of metallic ions from biomedical implants. However, the relatively high dissolution rate of low-density coatings remains an obstacle to their implementation. Here, chemical vapour deposition techniques may have advantages over the typically used physical vapour deposition (PVD) methods. Therefore, in this study, silicon nitride coatings were obtained by low-pressure chemical vapor deposition (LPCVD). Since the nitrogen-to-silicon (N/Si) ratio and deposition temperature have been reported as major factors affecting the performance of the coatings, the effects of ammonia (NH3) to dichlorosilane (SiH2Cl2) flow ratio and deposition temperature were systemically investigated in the form of microstructure, mechanical and tribological properties of the coatings. The results revealed that the coatings exhibited a dense structure. As the ammonia flow ratio increased, the surface became smoother, and the hardness and elastic modulus increased and reached the maximum at a flow ratio of 4, giving a hardness of around 27 GPa and an elastic modulus of 290 GPa, respectively. The higher mechanical properties of the coatings deposited at a flow ratio of 4 are attributed to the stronger covalent Si-N bonding, as confirmed by XPS results. However, the coatings deposited at a flow ratio of 2 exhibited the lowest wear rate, at 9.5 × 10−7 mm3 Nm−1, around one-third of the value of the coatings deposited at a flow ratio of 6, likely due to the high silicon content of these coatings. Increasing the temperature resulted in an increased deposition rate, higher hardness and elastic modulus as well as a lower wear rate, likely due to incomplete reactions at lower temperatures. The generally high hardness and low wear rate indicate that the coatings deposited by LPCVD are promising for application in spinal implants.