2011
DOI: 10.1016/j.jallcom.2011.11.011
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Effects of multi-element dopants of TiO2 for high performance in dye-sensitized solar cells

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Cited by 7 publications
(4 citation statements)
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“…enhanced the efficiency of DSSCs, as reported by Im et al (2012). This enhancement was attributed to a reduction in the recombination of electrons (in the conduction band of TiO 2 ) with the dye and/or electrolyte.…”
Section: Doping Of Tio 2 With Multielements (B C N and F)supporting
confidence: 67%
“…enhanced the efficiency of DSSCs, as reported by Im et al (2012). This enhancement was attributed to a reduction in the recombination of electrons (in the conduction band of TiO 2 ) with the dye and/or electrolyte.…”
Section: Doping Of Tio 2 With Multielements (B C N and F)supporting
confidence: 67%
“…A number of PCSCs have been fabricated which have different concentrations of carbon in the photo anodes. These types of photo anodes built with two or more nonmetals have attracted new attention with advantages ranging from improved spectral response, reduced electron hole recombination and amplified electron transport as compared to single type electrodes such pure anatase TiO 2 [5] [19] [20]. The synthesized PCSCs were structurally, morphologically and optically characterized and its photovoltaic properties were evaluated in this work.…”
Section: Introductionmentioning
confidence: 99%
“…The upshift of the Fermi level in the ETL accelerates the electron transfer and reduces the recombination loss across the interfaces of QDs/HTL and ETL/HTL, which eventually results in the enhancement of V oc . Also, more negative flat-band potential and higher concentration of charge carriers as realized from the MS plot account for the observed enhanced V oc and J sc . The observed deviations in the diode curve for the devices are attributed to the poor contacts at the HTL/CE interfaces, causing the lowering of shunt resistance; this can be overcome by engineering counter electrode materials. , The external quantum efficiencies (EQEs) of these devices were not obtained as a result of lower shunt resistance. , However, it can be anticipated that this limitation can be further overcome by engineering better deposition of hole transport material (HTM) onto CE.…”
Section: Resultsmentioning
confidence: 99%