Effects of morphology on the thermoelectric properties of Al-doped ZnO

Han, Li; Nong, Ngo Van; Zhang, Wei; Hưng, Lê Thành; Holgate, Tim C.; Tashiro, Kazunari; Ohtaki, Michitaka; Pryds, Nini; Linderoth, Søren

doi:10.1039/c3ra47617k

Cited by 73 publications

(70 citation statements)

References 47 publications

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“…Besides, the metallic compounds containing Tellurium tend to decompose and release harmful vapor in the high temperature application . In contrast, oxide materials such as Ca 3 Co 4 O 9 , Ca 3 Co 2 O 6 , Na 2 CoO 4 , ZnO , SrTiO 3 , and CaMnO 3 are environmental friendly operating for high temperature usage. Although the peak zT values of oxide materials are relative low as compared with intermetallic compounds, their chemical composition contains abundant elements and low‐cost of raw and material processing .…”

Section: Resultsmentioning

confidence: 99%

“…Under such high‐temperature conditions, oxide TE materials are promising candidates due to their natural durability, robustness to the environments in additional with their low‐cost and abundant source compared with conventional TE intermetallic compounds . They have therefore been widely studied with the aim to improve the value of zT using for example heavy element doping , nano‐structuring , nanowire and optimized morphology , and nano‐inclusion . During recent years, remarkable results have been reported on Al and Ga dually‐doped ZnO and Ca 3 Co 4 O 9 nanocomposite with the peak zT reached the values of 0.65 at 1200 K and 0.61 at 1140 K, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…They have therefore been widely studied with the aim to improve the value of zT using for example heavy element doping , nano‐structuring , nanowire and optimized morphology , and nano‐inclusion . During recent years, remarkable results have been reported on Al and Ga dually‐doped ZnO and Ca 3 Co 4 O 9 nanocomposite with the peak zT reached the values of 0.65 at 1200 K and 0.61 at 1140 K, respectively. However, the performance of oxide modules are still relative low, and so far their estimated conversion efficiency is smaller than 3% , which is due to the low thermoelectric performance of oxide materials in the low temperature range.…”

Section: Introductionmentioning

confidence: 99%

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Segmentation of low‐cost high efficiency oxide‐based thermoelectric materials

Hưng

Nong

Linderoth

et al. 2015

Physica Status Solidi (a)

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Thermoelectric (TE) oxide materials have attracted great interest in advanced renewable energy research owing to the fact that they consist of abundant elements, can be manufactured by low-cost processing, sustain high temperatures, be robust and provide long lifetime. However, the low conversion efficiency of TE oxides has been a major drawback limiting these materials to broaden applications. In this work, theoretical calculations are used to predict how segmentation of oxide and semimetal materials, utilizing the benefits of both types of materials, can provide high efficiency, high temperature oxide-based segmented legs. The materials for segmentation are selected by their compatibility factors and their conversion efficiency versus material cost, i.e., "efficiency ratio". Numerical modelling results showed that conversion efficiency could reach values of more than 10% for unicouples using segmented legs based p-type Ca 3 Co 4 O 9 and n-type ZnO oxides excluding electrical and thermal losses. It is found that the maximum efficiency of segmented unicouple could be linearly decreased with increasing the interfacial contact resistance. The obtained results provide useful tool for designing a low-cost and high efficiency thermoelectric modules based-oxide materials.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Segmentation of low‐cost high efficiency oxide‐based thermoelectric materials

Hưng

Nong

Linderoth

et al. 2015

Physica Status Solidi (a)

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“…The electric conductivity, Seebeck coefficient, and thermal conductivity must be therefore measured in the same direction so the figure-of-merit zT is calculated in a proper way [12][13][14][15][16][17] .For bismuth antimony telluride, its anisotropy is originated from the intrinsic misfit layered crystal structures of the material 18,19 . Nevertheless, the change of anisotropy of the bulk samples can also be affected by the processing route as well 16 .…”

Section: Introductionmentioning

confidence: 99%

Effects of spark plasma sintering conditions on the anisotropic thermoelectric properties of bismuth antimony telluride

et al. 2016

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Bismuth antimony telluride (BixSb2-xTe3, 0.4 < x< 0.6) is one of the best and most-used p-type semiconductor materials for near-room-temperature thermoelectric power generation. In this work, p-type Bi0.4Sb1.6Te3 samples were prepared under various conditions (temperature, holding time, and ramp-rate) using spark plasma sintering (SPS). The effects of SPS conditions on the anisotropic thermoelectric properties and microstructure evolutions were systematically investigated. The change of sintering temperature showed stronger influence than other sintering parameters to the resulting thermoelectric properties. Samples sintered over the temperature range between 653 K and 773 K showed significant differences in the degrees of orientations. The change was mainly caused by grain growth and re-orientation. Despite of the anisotropy, zT value as high as 1.2 to 1.3 was achieved over the temperature range of 300 to 360 K by directly using commercial power sintered at 723 and 773 K. The sintering profiles and microstructure evolutions during SPS were illustrated and the thermoelectric properties as a function of the degrees of orientations were shown and discussed in detail

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“…Thes park plasma sintering (SPS) system from Dr Sinter 515S (Syntex Inc.,J apan) was used to consolidate the samples under the following conditions:c onstant uniaxial pressure of 50 MPa;h olding temperature of 1223 K; holding time of 8min, Ar atmosphere,a nd ar amp rate of 130 Kmin À1 .T he details of this work are described elsewhere. [37] Thep I nt he course of the arc melting, the samples were remelted and turned over three times to ensure the homogeneity. Theo btained ingots were milled using ap lanetary ball milling station (PM-100;R etsch, Germany) for 5h under ap rotective argon atmosphere.T he powder was filtered through a6 0-mesh sieve and then sintered using SPS at 1373 Kf or 20 min (heating/ cooling rates of 50 Kmin À1 )u nder apressure of 50 MPa.…”

Section: Methodsmentioning

confidence: 99%

Segmented Thermoelectric Oxide‐Based Module for High‐Temperature Waste Heat Harvesting

et al. 2015

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We report a high‐performance thermoelectric (TE) oxide‐based module using the segmentation of half‐Heusler Ti0.3Zr0.35Hf0.35CoSb0.8Sn0.2 and misfit‐layered cobaltite Ca3Co4O9+δ as the p‐leg and 2 % Al‐doped ZnO as the n‐leg. The maximum output power of a 4‐couple segmented module at ΔT=700 K attains a value of approximately 6.5 kW m−2, which is three times higher than that of the best reported non‐segmented oxide module. The TE properties of individual legs, as well as the interfacial contact resistances, were characterized as a function of temperature. Numerical modeling was used to predict the efficiency and to evaluate the influence of the electrical and thermal losses on the performance of TE modules. Initial long‐term stability tests of the module at the hot and the cold side temperatures of 1073 K and 444 K, respectively, showed a promising result with 4 % degradation for 48 h operating in air.

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Effects of morphology on the thermoelectric properties of Al-doped ZnO

Cited by 73 publications

References 47 publications

Segmentation of low‐cost high efficiency oxide‐based thermoelectric materials

Segmentation of low‐cost high efficiency oxide‐based thermoelectric materials

Effects of spark plasma sintering conditions on the anisotropic thermoelectric properties of bismuth antimony telluride

Segmented Thermoelectric Oxide‐Based Module for High‐Temperature Waste Heat Harvesting

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