Effects of model polymer chain architectures of photo-resists on line-edge-roughness: Monte Carlo simulations

Patsis, G. P.; Gogolides, Εvangelos

doi:10.1088/1742-6596/10/1/095

Cited by 6 publications

(4 citation statements)

References 8 publications

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“…However, comparisons ͑see Fig. In accordance with previous work, 9 it is shown that a higher branching probability, leading to more entangled and less stretched polymers, results in lower LER. The obtained differences of the critical dimension ͑CD͒ are well below 2% and thus even lower than the differences reported between the applications of different continuous development simulation algorithms.…”

Section: Resultssupporting

confidence: 90%

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Three-dimensional resist development simulation with discrete models

Schnattinger

Bär

Erdmann

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Control and minimization of line-edge roughness (LER) is a crucial problem for further advancements in lithography. To simulate LER, a switch from continuous to discrete, molecular level resist models is required. This article presents a new algorithm for the discrete resist structure generation with nonoverlapping polymer distributions and a novel development simulation approach. The presented concept allows simultaneously the simulation of macroscopic profile dimensions as well as of microscopic roughness properties of the resist. Required microscopic dissolution times of the polymers are derived from the corresponding simulated local macroscopic development rates. By retaining all other resist parameters unchanged in the simulation, the isolated influence of varying the assumed polymer size, branching geometry, and dissolution time variations on LER is examined with this new method. Small, strongly tangled polymers lead to considerably lower LER values than bigger or less bended polymers. Compared to the investigated polymer size and geometry, the examined range of variances in the dissolution times has only a weak influence on LER

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Section: Resultssupporting

confidence: 90%

“…8,9 All suggested methods are based on an orthogonal, cubic lattice and lead to polymer distributions with spatial overlaps between different molecules. The aim of a discrete resist representation is to take also the microscopic resist structure into account.…”

Section: Generation Of Molecular Resist Representationmentioning

confidence: 99%

Three-dimensional resist development simulation with discrete models

Schnattinger

Bär

Erdmann

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…A stochastic lithography simulator developed in house [10][11][12][13][14] is used to produce the geometry of the transistor edges beginning from parameters such as the average degree of polymerization (ADP) of the resist film, photoacid generator Figure 1 shows the simulator flowchart until the production of the edge profile.…”

Section: From Stochastic Lithography Simulation To Device Operationmentioning

confidence: 99%

“…In our approach, LWR is introduced through the explicit stochastic simulation of the lithography processes leading to the development of photoresist lines [10][11][12][13][14] in section 2. It is assumed that LWR introduced in the final transistor gate will be proportional to this initial photopolymer LWR, after silicon etching, doping, and annealing [5].…”

Section: Introductionmentioning

confidence: 99%

Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance

2006

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Understanding how lithographic material and processing, affect linewidth roughness (LWR), and finally device operation is of immense importance in future scaled MOS transistors. The goal of this work is to determine the impact of LWR on device operation and to connect material and process parameters with it. To this end, we examine the effects of photoresist polymer length and acid diffusion length on LWR and transistor performance. Through the application of a homemade simulator of the lithographic process, it is shown that photoresists with small polymer chains and small acid diffusion lengths form lines with low LWR and thus lead to transistors with more reliable electrical performance.

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Synthesis of chemically amplified photoresist polymer containing four (Meth)acrylate monomers via RAFT polymerization and its application for KrF lithography

Liu

Zheng

et al. 2016

J Polym Res

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Effects of model polymer chain architectures of photo-resists on line-edge-roughness: Monte Carlo simulations

Cited by 6 publications

References 8 publications

Three-dimensional resist development simulation with discrete models

Three-dimensional resist development simulation with discrete models

Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance

Synthesis of chemically amplified photoresist polymer containing four (Meth)acrylate monomers via RAFT polymerization and its application for KrF lithography

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