Effects of Mg<sub>&lt;italic&gt;x&lt;/italic&gt;</sub>Zn<sub>1-&lt;italic&gt;x&lt;/italic&gt;</sub>O Thickness on the Bandwidth of Metal–Semiconductor–Metal Bandpass Photodetectors

Hwang, Jun–Dar; Lin, Guan-Syun; Hwang, Sheng-Jye

doi:10.1109/ted.2016.2628727

Cited by 6 publications

(2 citation statements)

References 19 publications

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“…A number of theoretical [17], [25]- [30] and experimental [31]- [35] studies have also been reported that investigate the influence of the structure's parameters in an endeavor to improve the ZnO-based UV-PD performance. However, to the best of the author knowledge, no investigation has been carried out to study the active layer doping profile effects on the ZnO-based MSM-PD performance.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Active Layer Material Quality and Doping Profile on the ZnO-Based MSM-PD’s Performance

Al‐Khalli¹,

Aboud²,

Debbar³

2019

IEEE Access

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The active layer material quality and doping profile effects on the ZnO-based thin film metal-semiconductor-metal photodiode's (MSM-PD) performance are studied using a 2-D numerical simulation. The results of the simulation reveal that the temporal response advantages of increasing the doping concentration of the PD's active layer are only appreciable at low bias. Whereas, using the downgraded material, the temporal response advantages are maintained for all applied biases but at the expense of a very low responsivity. This paper discusses the possibility of improving the temporal response while maintaining excellent responsivity. It is shown that the composed structure, made of a good material heavily doped top layer and a bottom layer lightly doped made of downgrade material, exhibits the desired temporal response advantages while maintaining an excellent responsivity. INDEX TERMS Metal-semiconductor-metal photodiode, numerical simulation, responsivity, temporal response, ZnO.

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Section: Introductionmentioning

confidence: 99%

Influence of the Active Layer Material Quality and Doping Profile on the ZnO-Based MSM-PD’s Performance

Al‐Khalli¹,

Aboud²,

Debbar³

2019

IEEE Access

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show abstract

“…Therefore, a thorough investigation is crucial to find the necessary compromise between these parameters in order to design an MSM‐PD with optimal detector performance. A number of theoretical and experimental studies have been reported that investigate the influence of the structure's parameters in an endeavor to improve the ZnO‐based UV‐PD performance. Unfortunately, in these works, only one or few parameters were considered, and their effects were analyzed for a particular performance feature while ignoring their effects on other characteristics.…”

Section: Introductionmentioning

confidence: 99%

Performance enhancement of ZnO‐based MSM photodiodes by optimizing structure parameters

Al‐Khalli

Debbar

2018

Int J Numerical Modelling

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A two-dimensional numerical simulation based on the drift-diffusion model has been used to study the influence of the structural parameters on the ZnObased thin film metal-semiconductor-metal photodiode's (MSM-PD) optical performance. A comparative study on photodiodes (PDs) with different structural parameters (active layer thickness, finger spacing, and width) at different illumination and biasing conditions has been conducted. The results of the simulation disclose the limit of using thicker active layer and wider finger spacing to achieve superior responsivity. In fact, the responsivity rapidly saturates, and a significant degradation in the response time befalls on the performance of the PD. The investigation suggests an optimum structure for the MSM-PD with about 0.2 μm active layer thickness, 5 μm finger spacing, and minimum achievable contact finger width.

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Post-oxidation effects on MgxZn1-xO/ZnO bi-layer metal-semiconductor-metal photodetectors

Hwang

Huang

Hwang

2019

Journal of Alloys and Compounds

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Effects of Mg_{<italic>x</italic>}Zn_{1-<italic>x</italic>}O Thickness on the Bandwidth of Metal–Semiconductor–Metal Bandpass Photodetectors

Cited by 6 publications

References 19 publications

Influence of the Active Layer Material Quality and Doping Profile on the ZnO-Based MSM-PD’s Performance

Influence of the Active Layer Material Quality and Doping Profile on the ZnO-Based MSM-PD’s Performance

Performance enhancement of ZnO‐based MSM photodiodes by optimizing structure parameters

Post-oxidation effects on MgxZn1-xO/ZnO bi-layer metal-semiconductor-metal photodetectors

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Effects of Mg<italic>x</italic>Zn1-<italic>x</italic>O Thickness on the Bandwidth of Metal–Semiconductor–Metal Bandpass Photodetectors

Cited by 6 publications

References 19 publications

Influence of the Active Layer Material Quality and Doping Profile on the ZnO-Based MSM-PD’s Performance

Influence of the Active Layer Material Quality and Doping Profile on the ZnO-Based MSM-PD’s Performance

Performance enhancement of ZnO‐based MSM photodiodes by optimizing structure parameters

Post-oxidation effects on MgxZn1-xO/ZnO bi-layer metal-semiconductor-metal photodetectors

Contact Info

Product

Resources

About

Effects of Mg_{<italic>x</italic>}Zn_{1-<italic>x</italic>}O Thickness on the Bandwidth of Metal–Semiconductor–Metal Bandpass Photodetectors