Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C

Abstract

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir ∕ Pt contact electrodes

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

“…[19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Polycrystalline, 19 nanocrystalline, 20 and amorphous 37 GaN have also shown good luminescence characteristics. Applications of polycrystalline GaN films have been demonstrated in LEDs, 38,39 white lighting, 39 UV photodetectors, 40 solar cells, 41,42 thin film transistors, 43,44 and field electron emitters, 16,45 and suitability of GaN films for application in large area flat panel displays has also been explored. 46 The potential of GaN films for these applications has thus driven the search for low cost and low temperature deposition processes on low cost substrates.…”

Effects of Mg doping on growth and structures of polycrystalline GaN by remote plasma MOCVD

“…On the other hand, we have developed a dual remote plasma (DRP) MOCVD system to grow GaN films at low temperature on glass and aluminum substrates for fabrication of low-cost and large area GaN optoelectronic devices [6]. The GaN films grown by DRP MOCVD at 300-400 1C were contained more than $5 at% hydrogen and good photoconductive properties were obtained [6][7][8]. We also demonstrated their feasibility for LEDs [9].…”

“…The sensitivity of photoconduction was improved with columnar morphology and c-axis orientated polycrystalline GaN (poly-GaN) film [7]. Heavy ($%) Mg doping was required to obtain large photocurrents as well as small dark currents, while crystal structures were found to deteriorate due to too much Mg-doping [8]. The morphology and crystal orientation of poly-GaN are important.…”

“…The morphology and crystal orientation of poly-GaN are important. For example, in a sandwich configuration device such as our diode reported previously [7,8], a columnar structure is considered to be suitable due to less carrier scattering by grain boundaries. Furthermore, it is believed that corientation and columnar morphology are strongly related to photoluminescence properties [10].…”

Plasmon effects on infrared spectra of GaN nanocolumns

“…4 We have previously reported that a broad intense peak can be observed in the infrared ͑IR͒ absorption spectra of thin films composed of undoped GaN nanocolumns. 5 Changes in the IR spectra, as well as in the electronic properties by Mg doping, were also demonstrated. 5 However, the origin of the broad peak in the IR spectrum has not been explained yet.…”