Effects of metal penetration into organic semiconductors on the electrical properties of organic thin film transistors

Cho, Jeong Ho; Kim, Do Hwan; Jang, Yunseok; Lee, Wi Hyoung; Ihm, Kyuwook; Han, Jin Hee; Chung, Sukmin; Cho, Kilwon

doi:10.1063/1.2357155

Cited by 98 publications

(69 citation statements)

References 22 publications

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“…[ 26 ] To prove the presence of trapped charges is due to the Ag layer, the following TAPC hole-only devices were fabricated: at a reverse bias of -0.5 V, indicating that the TAPC hole-only device is electrically shorted due to the penetration of Ag atoms, and this is a commonly known problem encountered in Ag evaporation. [27][28][29][30] To alleviate this shorting problem, Device 2 with a 10% Ag-doped TAPC sandwiched between the two undoped TAPC layers was fabricated. In this device, Al is used as the electrode.…”

Section: Gain Mechanism In Photodetectormentioning

confidence: 99%

Unraveling the Gain Mechanism in High Performance Solution‐Processed PbS Infrared PIN Photodiodes

Lee

Kim

2015

Adv Funct Materials

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High gain and low dark current solution‐processed colloidal PbS quantum dots infrared (IR) PIN photodetectors with IR sensitivity up to 1500 nm are demonstrated. The low dark current is due to the P‐I‐N structure with both electron and hole blockers. The high gain in our IR photodiodes is due to the enhancement of electron tunneling injection through the 1,1‐bis[(di‐4‐tolylamino) phenyl]cyclohexane (TAPC) electron blocker under IR illumination resulting from a distorted electron blocking barrier in the presence of photo‐generated holes trapped in the TAPC electron blocker. It is further found that the trap states in the TAPC layer are generated by the Ag atoms penetrated in the TAPC layer during the thermal evaporation process. The resulting photodetectors have a high detectivity value of 7 × 1013 Jones, which is even higher than that of a commercial InGaAs photodiode.

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Section: Gain Mechanism In Photodetectormentioning

confidence: 99%

Unraveling the Gain Mechanism in High Performance Solution‐Processed PbS Infrared PIN Photodiodes

Lee

Kim

2015

Adv Funct Materials

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“…[8] At smaller channel dimensions, the scenario is further complicated by the fact that the morphological characteristics -such as grains and grain boundaries -are often on the length-scale of device dimensions. Changes in morphology induced by electrode/dielectric interfaces of semiconductor material deposited on bottom-contact structures do not scale appropriately, while heat damage from metal deposition, the introduction of metal into the channel region, [9] and dependence upon active-layer thickness [10,11] plague top-contact devices [12] . Furthermore, ample evidence indicating that traps at grain boundaries lead to thermally or bias-activated mobility and/or access resistance make clear that the detailed characterization of contact effects is difficult or impossible to extract from devices employing polycrystalline films.…”

Section: Introductionmentioning

confidence: 99%

Detailed Characterization of Contact Resistance, Gate‐Bias‐Dependent Field‐Effect Mobility, and Short‐Channel Effects with Microscale Elastomeric Single‐Crystal Field‐Effect Transistors

Reese

Bao

2009

Adv Funct Materials

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The organic field‐effect transistor (OFET) has proven itself invaluable as both the fundamental element in organic circuits and the primary tool for the characterization of novel organic electronic materials. Crucial to the success of the OFET in each of these venues is a working understanding of the device physics that manifest themselves in the form of electrical characteristics. As commercial applications shift to smaller device dimensions and structure/property relationships become more refined, the understanding of these phenomena become increasingly critical. Here, we employ high‐performance, elastomeric, photolithographically patterned single‐crystal field‐effect transistors as tools for the characterization of short‐channel effects and bias‐dependent parasitic contact resistance and field‐effect mobility. Redundant characterization of devices at multiple channel lengths under a single crystal allow the morphology‐free analysis of these effects, which is carried out in the context of a device model previously reported. The data show remarkable consistency with our model, yielding fresh insight into each of these phenomena, as well as confirming the utility of our FET design.

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“…In particular, bis-PCBM is expected to exhibit an increased R Contact /R Channel ratio in comparison to the other fullerenes, which we do not observe for all voltages. Additional details of the injection interface, such as variations in the metal penetration into the semiconductor during top contact deposition 45 and dipole formation at the metal-fullerene interface modifying the effective injection barrier 46 may be influencing these results, among other effects. 44 Further analysis of the charge injection/extraction mechanism is clearly required for a full understanding of this discrepancy but is beyond the scope of the current report and will not be addressed further here.…”

Section: Field-effect Transistors Measurementsmentioning

confidence: 99%

Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability

Ball

Bouwer

Kooistra

et al. 2011

Journal of Applied Physics

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The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic complementary logic circuit architectures. To date, few soluble candidate materials have been studied that fulfill the stringent requirements of high carrier mobility and air stability. Here we present a study of three soluble fullerenes with varying electron affinity to assess the impact of electronic structure on device performance and air stability. Through theoretical and experimental analysis of the electronic structure, characterization of thin-film structure, and characterization of transistor device properties we find that the air stability of the present series of fullerenes not only depends on the absolute electron affinity of the semiconductor but also on the disorder within the thin-film.

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Effects of metal penetration into organic semiconductors on the electrical properties of organic thin film transistors

Cited by 98 publications

References 22 publications

Unraveling the Gain Mechanism in High Performance Solution‐Processed PbS Infrared PIN Photodiodes

Unraveling the Gain Mechanism in High Performance Solution‐Processed PbS Infrared PIN Photodiodes

Detailed Characterization of Contact Resistance, Gate‐Bias‐Dependent Field‐Effect Mobility, and Short‐Channel Effects with Microscale Elastomeric Single‐Crystal Field‐Effect Transistors

Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability

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