Effects of Mechanical Stress on Flexible Dual‐Gate a‐InGaZnO Thin‐Film Transistors

Yang, Jianwen; Chang, Ting‐Chang; Chen, Bo‐Wei; Liao, Po‐Yung; Chiang, Hsiao‐Cheng; Zhang, Qun

doi:10.1002/pssa.201700426

Cited by 11 publications

(7 citation statements)

References 32 publications

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“…This theoretical formula is consistent with other stress-modeling analysis [112] and experimental results. [113] In addition, z n is estimated with the following formula Reproduced with permission. [110] Copyright 2012, Institute of Electrical and Electronics Engineers.…”

Section: Strain Distribution Under Mechanical Bendingmentioning

confidence: 99%

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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Due to the advantages of being light, conformable, nonfragile, and bendable, flexible electronic devices have been considered for various applications such as flexible displays, bendable memories, e-textiles, radio frequency identifications (RFIDs), artificial skin/muscles, and wearable electronics. [1,2] Compared to rigid devices, the main challenges of flexible devices are finding suitable materials and fabrication methods to overcome the inherent barrier of low glass-transition temperature (T g ) for flexible substrates.Organic small molecules and polymers are flexible, but the corresponding devices are subject to issues resulting from short lifetime and difficult packaging. Conventional hydrogenated amorphoussilicon (a-Si:H) thin-film transistors (TFTs) can be prepared on flexible plastic substrates due to the low processing temperature of plasma-enhanced chemical vapor deposition (PECVD) (<200 C). [3] However, reduced carrier mobility and unstable characteristics under gate-bias stress limit their applications in flexible electronics. [4] Although low-temperature polysilicon (LTPS) TFTs show high mobility and stable characteristics, they are still unsuitable for flexible devices due to the crystallization temperature of polysilicon being higher than the T g of plastic substrates. [5,6] In addition, nanocrystalline-silicon (nc-Si) TFTs can show both good device stability and high carrier mobility (>10 2 cm 2 V À1 s À1 ). However, their high cost is a huge obstacle for industrial production, and the growth rate of nc-Si still requires further enhancement.Transparent oxide semiconductors (TOSs) have attracted considerable research interest because of their superior controllability in carrier generation and excellent optical transparency in the whole visible region. TFTs based on TOSs, such as InGaZnO, GaSnZnO, and AlSnZnInO, have been intensively studied due to the lower processing temperature than nc-Si TFTs, better uniformity than LTPS TFTs, and higher mobility and better stability than a-Si:H TFTs. [7][8][9] Among the state-of-the-art semiconductor materials, amorphous InGaZnO (a-IGZO), which was first fabricated by Nomura et al. in 2003, [10] is one of the most promising options, with an a-IGZO TFT successfully prepared on a flexible polyethylene terephthalate (PET)

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Section: Strain Distribution Under Mechanical Bendingmentioning

confidence: 99%

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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“…Indium oxide (In 2 O 3 ) films have high electron mobility, high carrier density, and excellent optical transmittance compared with other oxide semiconductors [17,18], making them an ideal material for transparent thin film transistors [19]. In order to obtain high-quality In 2 O 3 films, other elements are added, such as InSnO (ISO) [20][21][22], InZnSnO (IZTO) [23][24][25][26], InGaZnO (IGZO) [27][28][29][30], etc. The Zr element has a strong binding capacity to oxygen (Zr-O: 776 KJ/mol), higher than that of the In element to oxygen (In-O: 348 KJ/mol), which can inhibit the formation of oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Zhang

Zhou

et al. 2019

Coatings

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Solution-processed indium oxide is an ideal transparent semiconductor material with wide band gap. Zirconium is an element characterized by a strong binding ability to oxygen which can inhibit the formation of oxygen vacancies and reduce the surface defect state. In this paper, zirconium doped indium oxide (InxZryO) thin films were prepared by the solution method, with indium oxide being doped with zirconium in order to tune the relative number of oxygen vacancies. The influence of the Zr doping concentration and the post-annealed temperature on the properties of the InxZryO thin films was investigated. The results show that the doping process improves the crystallinity and relative density of the obtained films. A novel nondestructive method named microwave photoconductivity decay (μ-PCD) was used to evaluate the quality of InxZryO thin films by simply measuring their response under laser irradiation. The relative number of oxygen vacancies and the minority carrier concentration achieved minimum values at 10 at.% Zr doping concentration. Furthermore, InxZryO thin films with optimal properties from an electrical point of view were obtained at 10 at.% Zr doping concentration, annealed at 400 °C. Characterized by an average transmittance above 90% in the visible range, the obtained InxZryO thin films can be used as active layer materials in the fabrication of high-performance thin film transistor (TFT) devices.

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“…The mechanical strain-induced defects increase the carrier concentration by means of the increase in density of donor-like states. In other words, deep-state defects such as oxygen vacancies in IGZO bulk and at IGZO/GI interface regions increase the interface states and trap densities, which deteriorate the values of SS and hysteresis width. ,− …”

Section: Resultsmentioning

confidence: 99%

Impact of Polyimide Film Thickness for Improving the Mechanical Robustness of Stretchable InGaZnO Thin-Film Transistors Prepared on Wavy-Dimensional Elastomer Substrates

Jang

Kim

Yoon

2019

ACS Appl. Mater. Interfaces

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We report on the In-Ga-Zn-O thin-film transistors (IGZO TFTs) with outstanding mechanical stretchability, which were fabricated on ultrathin polyimide (PI) film/prestrained elastomer with a wavy-dimensional structure. The device characteristics of the fabricated devices were evaluated under mechanically strained conditions with various strains. The operational reliabilities against the bias stress conditions and during the cyclic stretching tests were also carefully examined. The stretchable IGZO TFTs exhibited good device operations without any marked degradation under stretching/compressed conditions with a strain of 40%. Under positive bias stress with a prestrain of 50%, the turn-on voltage instabilities for the TFTs prepared on 0.9 and 2.0 μm-thick PI films were estimated to be 1.5 and 3.9 V, respectively. During the cyclic stretching tests with a strain of 50%, the device operations failed after 20,000 and 100,000 stretching cycles for the TFTs fabricated on 2.0 and 0.9 μm-thick PI films, respectively. As a result, the IGZO TFTs fabricated on a thinner PI film presented more reliable operations after the repeated stretching events. The robust mechanical stretchability dependent on the PI film thickness was suggested to be due to the difference in critical values of bending radii and the influence of the local strain induced by the spatial fluctuations of the wavy structures.

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Effects of Mechanical Stress on Flexible Dual‐Gate a‐InGaZnO Thin‐Film Transistors

Cited by 11 publications

References 32 publications

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Impact of Polyimide Film Thickness for Improving the Mechanical Robustness of Stretchable InGaZnO Thin-Film Transistors Prepared on Wavy-Dimensional Elastomer Substrates

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