Abstract:Low capacitance and highly reliable Cu dual-damascene (DD) interconnects have been developed with self-organized “seamless low-k SiOCH stacks” (SEALS) structure. A carbon-rich sub-nano porous SiOCH (k=2.5) was directly stacked on an oxygen-rich porous SiOCH (k=2.7) in the SEALS structure, without a hard-mask (HM) and etch-stop (ES) layer of SiO2. The effective k-value (k
eff) of the Cu DD interconnect including the SiCN capping layer (k=4.9) was reduced to 2.9 compared to 3.4 on a conventiona… Show more
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