Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Lee, Seung-Ho; Balaji, Nagarajan; Ahn, Shihyun; Hussain, Shahzada Qamar; Han, Sangmyeong; Jung, Junhee; Jang, Jae Hoon; Lee, Yun‐Jung; Yi, Junsin

doi:10.1016/j.mseb.2012.10.029

Cited by 28 publications

(13 citation statements)

References 18 publications

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“…The O1s spectra were fitted with the energy components at ~529.6 eV, ~531.2 eV, and 532.0 eV by using three Gaussian functions of variable positions, widths, and intensities. The results agreed well with those reported in the literature [17,18]. The O 529.6 and O 531.2 peaks originate from the In 2 O 3 regions and the oxygen deficient regions respectively, while the peak of O 532.0 mainly originates from oxygen contamination [17,18].…”

Section: Resultssupporting

confidence: 91%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of 2.68×10 -4 Ω·cm, high hall mobility of 46.89 cm 2 /V.s, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

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Section: Resultssupporting

confidence: 91%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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“…However, the recently achieved high performance of IBC‐SHJ solar cells depends strongly on the use of doped amorphous hydrogenated silicon (a‐Si:H) layers, which introduce toxic gas precursors, and involve complex deposition conditions . In response, various types of dopant‐free extreme work‐function materials, such as PEDOT , graphene , Ni 1– x O:Li , WO x , MoO x , V 2 O x , TiO 2 , LiF x and Cs 2 CO 3 , have been widely applied in silicon heterojunction solar cells as substitutes for doped a‐Si:H p‐type or n‐type contacts for inducing the accumulation of holes or electrons on the silicon surface, and thus reducing the Shockley–Read–Hall (SRH) recombination and contact resistivity at the interface.…”

Section: Introductionmentioning

confidence: 99%

Dopant‐free back contact silicon heterojunction solar cells employing transition metal oxide emitters

Bao

Jia

et al. 2016

Physica Rapid Research Ltrs

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The present study investigates the electrical properties of transition metal oxide (TMO) emitters in dopant‐free n‐Si back contact solar cells by comparing the properties of solar cells employing three TMOs (WOx, MoOx and V2Ox) with varying electrical properties acting as p‐type contacts. The TMOs are found to induce large band bending in n‐Si, which reduces the injection level dependent interfacial recombination speed Seff and contact resistivity ρc. Among the TMO/n‐Si contacts considered, the V2Ox/n‐Si contact achieves the lowest Seff of 138 cm/s and ρc of 0.034 Ω cm2, providing the significant advantages over heavily doped a‐Si:H(p)/n‐Si contacts. The best device performance was achieved by the V2Ox/n‐Si solar cell, demonstrating an efficiency of 16.59% and an open‐circuit voltage of 610 mV relative to solar cells based on MoOx/n‐Si (15.09%, 594 mV) and WOx/n‐Si (12.44%, 539 mV). Furthermore, the present work is the first to employ WOx, V2Ox and Cs2CO3 in back contact solar cells. The fabrication process employed offers great potential for the mass production of back contact solar cells owing to simple, metal mask patterning with high alignment quality and dopant‐free steps conducted at a lower temperature.

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“…Ag paste, due to the glass frits it contains, is more highly resistive than Ag itself, whose resistivity is 1.60 μΩ cm. Many studies have substituted a different electrode in order to achieve high efficiency 8–10. In particular, Cu became popular as a new material for constructing electrodes because it has a resistivity of 1.70 μΩ cm 11–16.…”

Section: Introductionmentioning

confidence: 99%

Development of Selective Electroless‐Deposited Electrode in Heterojunction with Intrinsic Thin‐Layer Solar Cell

Kim

Park

Choi

et al. 2015

Israel Journal of Chemistry

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In this paper, we describe selective deposition of a major electrode and a protection electrode in a heterojunction with intrinsic thin‐layer (HIT) type solar cell. Sn and Ni were used for the protection electrode to prevent the oxidation of Cu, which was used for the main electrode. SEM and TEM were used to analyze the microstructural evolution and changes in the interface as a result of each electroless deposition. Finally, the performance of our solar cell created via electroless deposition was evaluated. We determined the photovoltaic conversion efficiency (PCE) to be 16.4 %, the fill factor (FF) to be 72.2 %, the open circuit voltage (Voc) to be 681 mV, and the short circuit current (Jsc) to be 33.0 mA/cm2. These output values match the performance of an Ag screen‐printed solar cell and demonstrate the possibility of commercializing an inexpensive HIT solar cell with high efficiency.

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Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

Cited by 28 publications

References 18 publications

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Dopant‐free back contact silicon heterojunction solar cells employing transition metal oxide emitters

Development of Selective Electroless‐Deposited Electrode in Heterojunction with Intrinsic Thin‐Layer Solar Cell

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