Effects of La and Ni doping on ferroelectric and photocatalytic properties of Aurivillius Bi7Ti3Fe3O21

Narrow Bandgap Inorganic Ferroelectric Thin Film Materials

“…studied that the La doped Bi 7 Ti 3 Fe 3 O 21 device reduced bandgap and promoted photocatalytic efficiency. [ 187 ]…”

“…[186] Fang et al studied that the La doped Bi 7 Ti 3 Fe 3 O 21 device reduced bandgap and promoted photocatalytic efficiency. [187] The Narrow bandgap inorganic ferroelectric thin-film materials are considered attractive for photocatalytic applications. It can combine optoelectronic and ferroelectric properties in a wide light absorption range to enhance photocatalytic activity, which is one of the strategies to solve some problems (the high recombination rate of photogenerated electron-hole pairs inside the photocatalyst, the reverse reaction of intermediate species, and the inertness to visible light), which are considered to be the key issues hindering the photoconversion efficiency.…”

The Structural and Dielectric Properties of Bi3−xNdxTi1.5W0.5O9 (x = 0.25, 0.5, 0.75, 1.0)

“…Bi 3 TiNbO 9 (BTNO) with m = 2 that consists of (Bi 2 O 2 ) 2+ layers between which there are (BiTiNbO 7 ) 2layers [26] is a promising material for fabricating high temperature piezoelectric sensors because of their very high Curie temperature T C (914-921 • C) [14,15], despite the fact that the piezoelectric modulus of BTNO ceramic is fairly low (d 33 < 7 pC/N) [27]. Numerous examples [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42] showed that replacements of atoms in Aand also in B-positions of an AP's crystal lattice led to a change in the structure, the dielectric properties and significantly influenced the polarization processes in these compounds.…”