Effects of Kr implanted O-polar ZnO thin films on structure and optical properties

Jiang, Qixia; Ying, Minju; Lian, Jie; Dai, Kai; Shi, Yujun; Wei, Mingyang; Wang, Chenlin; Zhang, Yu

doi:10.1016/j.optmat.2020.109867

Cited by 7 publications

(4 citation statements)

References 36 publications

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“…Next, a thin MgO buffer layer was produced at 500 • C, and followed by a ZnO buffer layer and epilayer growth at 450 • C and 650 • C, respectively. [12] It was shown that rock salt-MgO layers grown in the typical Stranski-Krastanov pattern produce Zn-polar ZnO. [27] Three Zn-polar ZnO samples were prepared and the AFM results verified that the samples are Zn-polar films.…”

Section: Experimental Methodsmentioning

confidence: 94%

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Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films*

Jiang¹,

Lian²,

Ying³

et al. 2021

Chinese Phys. B

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The optical properties of materials are of great significance for their device applications. Different numbers of krypton ions are doped into high-quality Zn-polar ZnO films fabricated by molecular beam epitaxy (MBE) on sapphire substrates through ion implantation. Krypton is chemically inert. The structures, morphologies, and optical properties of films are measured. The x-ray diffraction (XRD) spectra confirm the wurtzite structures of Zn-polar ZnO films. Atomic force microscopy (AFM) results show that the films have pit surface structure and higher roughness after Kr ion implantation. A detailed investigation of the optical properties is performed by using the absorption spectrum, photoluminescence (PL), and spectroscopic ellipsometry (SE). The absorption spectrum is measured by UV-visible spectrophotometer and the bandgap energy is estimated by the Tauc method. The results show that the absorption increases and the bandgap decreases after Kr ion implantation. Moreover, the Kr ion implantation concentration also affects the properties of the film. The ellipsometry results show that the films’ refractive index decreases with the Kr ion implantation concentration increasing. These results can conduce to the design and optimization of Kr ion-implanted polar ZnO films for optoelectronic applications.

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Section: Experimental Methodsmentioning

confidence: 94%

“…[10,11] For these reasons, we investigate ion implantation's effect on the different polar ZnO materials separately. [12] Among many methods of preparing ZnO materials, [13,14] molecular beam epitaxy (MBE) is the most advanced technique for growing high-quality crystal films on substrates.…”

Section: Introductionmentioning

confidence: 99%

Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films*

Jiang¹,

Lian²,

Ying³

et al. 2021

Chinese Phys. B

Self Cite

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show abstract

“…ion implanted [19][20][21][22] and metalorganic vapor phase epitaxy (MOVPE) [23][24]. Among these techniques, metalorganic vapour phase epitaxie processes have an obvious advantage for future industrialization.…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, it is necessary to exploit an effective metalorganic source for ptype ZnO doping. In previous works, it has been reported experimentally and theoretically [15][16][17][18][19][20][21][22][23][24][25][26][27], that Sb could be an effective acceptor impurity in ZnO. In that sense, commercialized metalorganic compounds of Sb with less toxicity, such as trimethyl antimony (TMSb) and triethyl antimony (TESb) can be used.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of ZnO:Sb/n-ZnO homojunctions

et al. 2021

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Antimony doped ZnO layers have been grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates at high temperature (950°C) and low-pressure conditions (50 torr).Nitrous oxide and diethyl-zinc have been used as oxygen and zinc precursors, respectively. The incorporation of antimony has been obtained from the decomposition of triethyl-antimony doping molecules added in the gas phase. Sb concentrations were measured from 8.10 18 to 10 19 at /cm -3 using secondary ion mass spectroscopy. Our results suggest the formation of acceptor dopantdefect complexes, such as the SbZn-2VZn. Low temperature photoluminescence spectra of Sbdoped layers exhibit donor-acceptor pair transitions at 3.253 eV. Unlike Raman spectra of nitrogen doped ZnO layers which show several local vibrational modes related to nitrogen incorporation, these modes which are absent in the antimony-doped ZnO layers. n-ZnO/p-ZnO:Sb homojunction diodes on ZnO substrate have been successfully elaborated. The current-voltage characteristics of the device exhibit a rectifying behaviour with a turn-on voltage of 3V.

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Impact of N+ ion implantation on the properties of ZnSe thin films

Gupta

Chauhan

2021

J Mater Sci: Mater Electron

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Effects of Kr implanted O-polar ZnO thin films on structure and optical properties

Cited by 7 publications

References 36 publications

Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films*

Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films*

Fabrication and characterization of ZnO:Sb/n-ZnO homojunctions

Impact of N+ ion implantation on the properties of ZnSe thin films

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