Effects of irradiation with electrons of different energies on the dark conductivity and the network of hydrogenated amorphous silicon films

Liao, Naiman; Li, W.; Liu, Zhao; Jiang, Yadong; Ma, Naiheng; Li, Y.; Wu, Zhiming; Li, S.B.

doi:10.1080/09500830802468211

Cited by 5 publications

(4 citation statements)

References 37 publications

(38 reference statements)

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“…Figure 2a,b shows the microstructure parameter (R*) of the passivation layers deposited by different GR values. The FT-IR absorption of a-Si:H and µc-Si:H provides specific information about the type of bonds present between Si and H [11,12]. In this study, two kinds of bonds with a stretching vibrational mode were observed to investigate the structural properties of the passivation layers, such as Si-H bonds with a peak at around 2000 cm −1 and Si = H 2 bonds with a peak at around 2090 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

et al. 2019

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We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with conventional LTPS TFT. Moreover, the leakage current measured at VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered as a candidate for high performance LTPS TFTs.

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Section: Resultsmentioning

confidence: 99%

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

et al. 2019

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“…The behaviors of the <εim, max>, <εreal, min> and C inferred that after hydrogen treatment the films show fewer voids and hence, a higher structural order. The Raman spectroscopy approach, which is effective for studying the development of ordering in amorphous silicon networks, was used to explain the ordered film network's response to hydrogen plasma treatment power [15]. The Raman spectra of the a-Si:H layers for different treated powers as a function of the wavenumber are illustrated in Figure 2.…”

Section: Resultsmentioning

confidence: 99%

“…Initially, these values decrease as the treated power increases from 0 to 40 W, beyond which all values increase. Notably, the minimum values for ITA/ITO, Δθ, and C were obtained at the treated The Raman spectroscopy approach, which is effective for studying the development of ordering in amorphous silicon networks, was used to explain the ordered film network's response to hydrogen plasma treatment power [15]. The Raman spectra of the a-Si:H layers for different treated powers as a function of the wavenumber are illustrated in Figure 2.…”

Section: Resultsmentioning

confidence: 99%

The Impact of the Micro-Structure within Passivated Layers on the Performance of the a-Si:H/c-Si Heterojunction Solar Cells

Lee,

Park,

Pham

et al. 2023

Energies

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This study investigated the correlation between the degree of disorder of the post-hydrogen plasma treatment (HPT) of the intrinsic hydrogenated amorphous silicon (a-Si:H(i)) and the device characteristics of the a-Si:H/c-Si heterojunction (HJ) solar cells. The reduction in the degree of disorder helps to improve interface defects and to enhance the effective carrier lifetime of the a-Si:H/c-Si heterojunction. The highest effective minority carrier lifetime of 2.08 ms was observed in the film with the lowest degree of disorder of 2.03. The devices constructed with HPT a-Si:H(i) having a lower degree of disorder demonstrated higher device performance in terms of open-circuit voltage (Voc), fill factor (FF), and subsequent conversion efficiency. An a-Si:H(i) with a lower degree of disorder (2.03) resulted in a higher Voc of 728 mV and FF of 72.33% and achieved a conversion efficiency of up to 20.84% for the a-Si:H/c-Si HJ silicon solar cell.

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“…A Raman spectrum characteristic of µc-Si:H was observed at GR values above 0.75 and the XC sharply increased. [11][12]. In this study, two kinds of bonds with a stretching vibrational mode were observed to investigate the structural properties of the passivation layers, such as Si-H bonds with a peak at around 2000 cm -1 and Si=H2 bonds with a peak at around 2090 cm -1 .…”

Section: Resultsmentioning

confidence: 99%

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Jang¹,

Pham²,

Lee³

et al. 2018

Preprint

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We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using an a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with a conventional LTPS TFT. Moreover, the leakage current measured at a VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered a candidate for high performance LTPS TFTs.

show abstract

Effects of irradiation with electrons of different energies on the dark conductivity and the network of hydrogenated amorphous silicon films

Cited by 5 publications

References 37 publications

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

The Impact of the Micro-Structure within Passivated Layers on the Performance of the a-Si:H/c-Si Heterojunction Solar Cells

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

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