Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors

Walle, Van de; Chris, G

doi:10.4028/www.scientific.net/msf.457-460.15

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…1 Self-interstitials and antisite defects are energetically unfavorable in InN due to the small lattice constant and the large-size mismatch between the cations and anions, respectively. 2,4 More recently, surface electron accumulation has emerged as another factor contributing to the n-type conductivity in InN. 5,6 The purpose of this letter is to investigate the relative importance of these three contributions to the n-type conductivity of InN.…”

mentioning

confidence: 99%

Origin of the n-type conductivity of InN: The role of positively charged dislocations

Piper

Veal

McConville

et al. 2006

Applied Physics Letters

144

104

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As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017cm−3) with increasing film thickness (from 50to12000nm). The combination of background donors from impurities and the extreme electron accumulation at InN surfaces is shown to be insufficient to reproduce the measured film thickness dependence of the free-electron density. When positively charged nitrogen vacancies (VN+) along dislocations are also included, agreement is obtained between the calculated and experimental thickness dependence of the free-electron concentration.

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mentioning

confidence: 99%

Origin of the n-type conductivity of InN: The role of positively charged dislocations

Piper

Veal

McConville

et al. 2006

Applied Physics Letters

144

104

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Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition

Huh

Chung

Nigam

et al. 2006

Journal of Applied Physics

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A variety of defect-sensitive techniques have been employed to detect, identify, and quantify the residual impurities and native defects in high-purity (undoped) 6H-SiC crystals grown by halide chemical-vapor deposition technique. The incorporation efficiencies of N and B are determined by the site-competition effect. Most notably, material with low residual N levels (∼1014cm−3) can be produced. In addition, the nitrogen concentrations obtained from Hall-effect measurements and low-temperature photoluminescence are systematically lower than those determined from secondary-ion-mass spectrometry. The difference is ascribed to nitrogen forming complexes with native defects. The energy level of this complex is approximately 0.27eV below the conduction band. Four major electron traps with activation energies of 0.4, 0.5, 0.65, and 1eV and five hole traps with activation energies of 0.3, 0.4, 0.55, 0.65, and 0.85eV were observed by deep-level transient spectroscopy. The concentration of all traps decreased strongly with increasing C∕Si ratio during growth. Increasing the C∕Si flow ratio also led to increased resistivity of the crystals and change of conductivity from conductive n type to high-resistivity p type. The Fermi level in p-type material is pinned either to highly compensated shallow B acceptors or to deep B-related center at 0.6eV above the valence band. Electron paramagnetic resonance shows the presence of positively charged carbon vacancies in such high-resistivity material.

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Investigation on the Temperature and Size Dependent Mechanical Properties and Failure Behavior of Zinc Blende (ZB) Gallium Nitride (GaN) Semiconducting Nanowire

Rahman

Mitra

Motalab

et al. 2020

2020 IEEE Region 10 Symposium (TENSYMP)

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Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors

Cited by 3 publications

References 15 publications

Origin of the n-type conductivity of InN: The role of positively charged dislocations

Origin of the n-type conductivity of InN: The role of positively charged dislocations

Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition

Investigation on the Temperature and Size Dependent Mechanical Properties and Failure Behavior of Zinc Blende (ZB) Gallium Nitride (GaN) Semiconducting Nanowire

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