Effects of ion pretreatments on the nucleation of silicon on silicon dioxide

Basa, C.; Hu, Y. Z.; Tinani, M.; Irene, E. A.

doi:10.1116/1.581526

Cited by 13 publications

(2 citation statements)

References 19 publications

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“…Studies have shown that defects can increase the nucleation density of Si nanoparticles on SiO 2 surfaces [24,25], so control experiments were performed to determine if the CHF 3 /O 2 pattern transfer RIE process altered the reactivity of the Si 3 N 4 at the bottom of the features. Fig.…”

Section: Resultsmentioning

confidence: 99%

Selective silicon nanoparticle growth on high-density arrays of silicon nitride

Coffee¹,

Shahrjerdi²,

Banerjee³

et al. 2007

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Selective silicon nanoparticle growth on high-density arrays of silicon nitride

Coffee¹,

Shahrjerdi²,

Banerjee³

et al. 2007

Journal of Crystal Growth

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“…Shown in the insets are the corresponding diffraction patterns. 13,14 More importantly, the film is fully polycrystalline with large grains right down to the Si/SiO 2 interface. The grain size distribution was also measured, and found to be lognormal ͑not shown͒.…”

Section: B Piii Vs Thermal Pecvdmentioning

confidence: 99%

Direct low-temperature chemical vapor deposition of fully crystalline micro- and polycrystalline silicon thin films on SiO2 using plasma immersion ion implantation

Shin

Huh

2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inLow-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition J. Vac. Sci. Technol. A 32, 02B110 (2014); 10.1116/1.4849355 Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures J. Appl. Phys. 112, 024906 (2012); 10.1063/1.4736548 Hybrid-phase growth in microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition at low temperatures J. Appl. Phys. 97, 094910 (2005); 10.1063/1.1883720 Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation Aluminum mediated low temperature growth of crystalline silicon by plasma-enhanced chemical vapor and sputter depositionPolycrystalline silicon films on SiO 2 were deposited without external heating by plasma immersion ion implantation using bias voltages ranging from Ϫ5 to Ϫ15 kV and electron cyclotron resonance plasma of SiH 4 . Compared with films deposited without ion irradiation, ion implanted films have larger grains and lower grain density even when their deposition temperature was lower. Furthermore, ion irradiated films are fully dense and large-grained starting from the initial Si/SiO 2 interface without the initial amorphous/microcrystalline seed layer often thought to be necessary to produce polycrystalline silicon films at low temperatures. Using plasma immersion ion implantation, deposition of fully polycrystalline Si films with thicknesses less than 30 nm was demonstrated at temperatures as low as 410°C.

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Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

Kajikawa¹,

Tsuchiya

Noda

et al. 2004

Chemical Vapor Deposition

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na edge and the microwave plasma ball (or discharging sphere) is immobilized at the tip. The substrate distance, defined as the gap between the tip of the antenna edge and the substrate, can be adjusted in the range 0±80 mm by means of the up or down movement of a substrate holder. A two inchsized heater was used as the substrate holder. Its temperature was monitored by a thermocouple or an IR pyrometer. Each Si substrate was coated with a 0.5±5 nm catalytic film of Ni or Fe, by E-beam evaporation, and magnetron sputtering, respectively, without removing its native SiO 2 layer. Pure hydrogen and methane (over 99.9999 % pure) were used as reactant gases for the growth of CNFs. In each experimental run, the flow rates of hydrogen and methane were set as constants of 45 sccm and 5 sccm, respectively, while the chamber pressure, microwave power, and growth time were set at 20 torr, 60 W, and 3 min, respectively.

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Effects of ion pretreatments on the nucleation of silicon on silicon dioxide

Cited by 13 publications

References 19 publications

Selective silicon nanoparticle growth on high-density arrays of silicon nitride

Selective silicon nanoparticle growth on high-density arrays of silicon nitride

Direct low-temperature chemical vapor deposition of fully crystalline micro- and polycrystalline silicon thin films on SiO2 using plasma immersion ion implantation

Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

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Effects of ion pretreatments on the nucleation of silicon on silicon dioxide

Cited by 13 publications

References 19 publications

Selective silicon nanoparticle growth on high-density arrays of silicon nitride

Selective silicon nanoparticle growth on high-density arrays of silicon nitride

Direct low-temperature chemical vapor deposition of fully crystalline micro- and polycrystalline silicon thin films on SiO2 using plasma immersion ion implantation

Incubation Time during Chemical Vapor Deposition of Si onto SiO2 from Silane

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Product

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Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane