Effects of ion implantation on deep-submicrometer, drain-engineered MOSFET technologies

Stinson, Mark; Osburn, C. M.

doi:10.1109/16.75157

Cited by 20 publications

(2 citation statements)

References 18 publications

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“…This reoxidation can reduce the parasitic gate/source and gate/drain capacitances, prevent the gate oxide degradation when source/drain are implanted, 5 and push away the short channel effects. Therefore, the gate etch is followed by a gate reoxidation.…”

Section: Specific Gate Passivationmentioning

confidence: 99%

A heavy ion implanted pocket 0.10 μm n-type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process

Bénistant¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Specific Gate Passivationmentioning

confidence: 99%

A heavy ion implanted pocket 0.10 μm n-type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process

Bénistant¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Gate spacers are very important in submicron metal‐oxide‐semiconductor field effect transistors (MOSFETs) because they control the source/drain doping profiles and suppress the short channel effect . Typical film thickness required for gate spacer is below 10 nm.…”

Section: Introductionmentioning

confidence: 99%

The effect of plasma power on the properties of low‐temperature silicon nitride deposited by RPALD for a gate spacer

Jang

Jeon

Song

et al. 2015

Physica Status Solidi (a)

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Phone: þ82 2 2220 0387, Fax: þ82 2 2292 3523We investigated the effects of NH 3 plasma power on characteristics of low-temperature silicon nitride thin films for application of a gate spacer. SiN x thin film was deposited on a Si(100) substrate by remote plasma atomic layer deposition (RPALD) using trisilylamine (TSA) as a Si precursor and NH 3 gas as a reactant. NH 3 remote plasma was analyzed with optical emission spectroscopy (OES) and it largely consisted of NH and H. As the plasma power increased, more NH and H radicals were generated and a proportion of NH radicals in the plasma increased, which resulted in the slight increase of the high-N content and low-H content in SiN x thin film. The low-H content with nearly stoichiometric SiN x thin films improve etch rate properties. The densities of RPALD SiN x thin film were 2.7 g cm À3 and almost the same regardless of plasma power.RPALD SiN x thin films showed a low leakage current density of 10 À7 A cm À2 at 2 MV cm À1 and a breakdown voltage of approximately 8 MV cm À1 .

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MOS Transistor Fabrication

Franssila

2010

Introduction to Microfabrication

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Effects of ion implantation on deep-submicrometer, drain-engineered MOSFET technologies

Cited by 20 publications

References 18 publications

A heavy ion implanted pocket 0.10 μm n-type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process

A heavy ion implanted pocket 0.10 μm n-type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process

The effect of plasma power on the properties of low‐temperature silicon nitride deposited by RPALD for a gate spacer

MOS Transistor Fabrication

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