Effects of Ion Bombardment on Interfaces of GMR [Ni-Fe/Cu] Multilayers

泰敬, 宮本; 健太郎, 渡邊; 茂樹, 中川; 正彦, 直江

doi:10.3379/jmsjmag.21.565

Cited by 4 publications

References 8 publications

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Influence of spin polarization enhancement layer to rare earth–transition metal thin films for perpendicular tunneling magnetoresistance evaluated by ferromagnetic Hall effect

Hatori

Okuda

Nakagawa

2006

Journal of Applied Physics

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Fluctuation field and time dependence of magnetization in TbFeCo amorphous rare earth-transition metal thin films for perpendicular magnetic recording Magnetic properties of ion beam sputter-deposited TbFeCo and GdFeCo thin films with their compensation point were studied using ferromagnetic Hall effect measurement. Gd x ͑Fe 90 Co 10 ͒ 1−x thin films sputter deposited using Kr exhibited high squareness ratio and sharp magnetization reversal compared with those prepared using Ar as sputtering gas. Lower kinetic energy of sputtering ions was effective to attain higher squareness ratio. Ferromagnetic Hall effect clarifies the magnetization reversal process of a FeCo͑x nm͒ layer contacted to a TbFeCo͑50 nm͒ layer. FeCo layer with thickness less than 2 nm is magnetized together with TbFeCo layer. Ferromagnetic Hall measurement is a powerful tool to determine the magnetization process of very thin films and magnetically coupled layers.

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Influence of spin polarization enhancement layer to rare earth–transition metal thin films for perpendicular tunneling magnetoresistance evaluated by ferromagnetic Hall effect

Hatori

Okuda

Nakagawa

2006

Journal of Applied Physics

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CoFe/IrMn Spin-Valves Prepared on Cu Islands

Umemoto¹,

Oikawa²,

Maeda³

et al. 1998

7th Joint MMM-Intermag Conference. Abstracts (Cat. No.98CH36275)

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Effects of Ta/Cu Double Structured Underlayers on GMR in CoFe/IrMn Spin-Valves

et al. 1997

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By inserting only 0.75 nm-thick Cu undedayer between the IrMn/CoFe/Cu/CoFe spin-valve stack and Ta underlayer, the MR ratio was about 1.8 times as large as that without the Cu layer. XRD and magnetic measurements suggest that the Cu "islands" formed in the initial growth stage modify the interfaces of the spin-Valve, resulting in the enhancement of the spin-dependent scattering. When the Cu thickness (t) was larger than 1.5 nm, the MR ratio and coercivity of the free layer were increased and decreased, respectively, in comparison with those of t=O nm. This was due to the considerable increase in the crystallinity of the spin-valve films. Namely, Cu is expected to function as the buffer "layer" in this thickness range. The inductive/spin-valve composite heads using a material developed in this study were stable and quiet in the dynamic performance.

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Effects of Ion Bombardment on Interfaces of GMR [Ni-Fe/Cu] Multilayers

Cited by 4 publications

References 8 publications

Influence of spin polarization enhancement layer to rare earth–transition metal thin films for perpendicular tunneling magnetoresistance evaluated by ferromagnetic Hall effect

Influence of spin polarization enhancement layer to rare earth–transition metal thin films for perpendicular tunneling magnetoresistance evaluated by ferromagnetic Hall effect

CoFe/IrMn Spin-Valves Prepared on Cu Islands

Effects of Ta/Cu Double Structured Underlayers on GMR in CoFe/IrMn Spin-Valves

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