Effects of interfacial oxide layer thickness and interface states on conversion efficiency of SnO2/ SiO2/Si(N) solar cells

Hocine, D.; Belkaid, Mohammed Saïd

doi:10.24084/repqj06.255

Cited by 7 publications

(15 citation statements)

References 11 publications

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“…The unique effect of quantum mechanical (or electrostatic) doping that could modulate nanomaterial's workfunction, therefore, needs to be quantified and optimized to improve the cell characteristics. The interfacial oxide thickness, on the other hand, is known to have a significant effect on the efficiency of the conventional MIS solar cells [26], [27]; the oxide thickness has to be optimally designed for the surface defect passivation as well as for the suppression of dark current [26], [27]. In this paper, we model the conventional effects of interfacial oxide thickness for NIS solar cells, and, in addition, extend the standard bulk model to include the effect of quantum mechanical doping of the nanomaterial.…”

Section: Introductionmentioning

confidence: 99%

Computational Study of Hybrid Nanomaterial/Insulator/Silicon Solar Cells

Imran

Butt

2015

IEEE Trans. Electron Devices

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We present a computational study on hybrid nanomaterial-insulator-silicon solar cells where single-walled carbon nanotube or graphene forms the emitter as well as top conducting electrode on n-type crystalline silicon having a thin interfacial tunnel oxide. The effects of nanomaterial doping and tunnel oxide thickness on cell characteristics are modeled. Similar to bulk emitters, cell efficiency could be increased by chemical doping (p-type) of the nanomaterial. Unlike bulk, nanomaterial could get electrostatically doped (n-type) due to its low quantum capacitance, by the surface charge density in silicon. For chemically undoped graphene on lightly (10 16 /cm 3 ) doped silicon, efficiency loss due to the electrostatic doping effect is ∼11%. A moderate p-type chemical doping (0.2 eV shift in Fermi level) of graphene reduces the aforementioned loss to ∼2%. The electrostatic doping effect in carbon nanotube-based cells is relatively small and independent to nanotube's chemical doping. For tunnel oxide thickness ≥2 nm, photogenerated carrier accumulation at silicon/oxide interface considerably enhances the electrostatic doping effect. The effect of tunnel oxide thickness variation on fill factor and open circuit voltage is shown to be qualitatively similar to standard bulk metalinsulator-silicon solar cells. Our model predicts an optimal oxide thickness of ∼1 nm which confirms the experimental reports.Index Terms-Carbon nanotube (CNT), graphene, hybrid solar cell, interfacial oxide barrier, quantum capacitance, workfunction tuning. 0018-9383

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Section: Introductionmentioning

confidence: 99%

Computational Study of Hybrid Nanomaterial/Insulator/Silicon Solar Cells

Imran

Butt

2015

IEEE Trans. Electron Devices

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“…The substrates temperature was kept at 500°C and monitored by digital temperature controller. Finally, the films were annealed at 500°C for 30 minutes and measured for their optical and electrical properties [1,11]. …”

Section: Deposition Of Sb:f:sno 2 Filmmentioning

confidence: 99%

“…In order to enhance the performance of a solar cell, it needs to reduce the reflection loss from the surface of the cell [1]. A flexible optical design for light collection is vital in achieving high performance solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…The effects of interfacial oxide layer thickness on the open circuit voltage and efficiency of the cells have been increased [3]. Aluminum (Al) and Silver (Ag) metal layers were used in place of the counter and back electrodes [1,4]. Among these, Sb:F:SnO 2 is chosen as an anti-reflective (AR) layer because of its high electrical conductivity and its transparency in the visible and infrared light [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the perfect anti-reflective structure has been a subject of intensive research in thin film optics and most importantly, for solar cell applications [2].The interfacial layer in a Schottky barrier solar cell plays an important role in determining the short circuit current, open circuit voltage, fill factor and efficiency of the cell. The effects of interfacial oxide layer thickness on the open circuit voltage and efficiency of the cells have been increased [3]. Aluminum (Al) and Silver (Ag) metal layers were used in place of the counter and back electrodes [1,4].…”

Section: Introductionmentioning

confidence: 99%

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Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films

Oo¹,

Thu²,

Oo³

et al. 2017

ujpa

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The Sb:F:SnO 2 layers (AR) were prepared by spray pyrolysis method. The anti-reflective layers (AR) heat-treated at 500°C for 30 min (solution amount 20 cc and 25 cc) have shown an improved crystallinity with crystallite size of 38-39 nm, high optical transmission of around 70 % at 450 nm. Incorporation of anti-reflective layer at cathode interface of SiO 2 /Si(N) devices increased the power conversion efficiency from 1.2% to 2.7% which is mainly contributed from photocurrent enhancement. The enhanced efficiency mainly contributed to the increase in J sc . It is attributed to enhanced light absorption and better charge transport in the SiO 2 /Si (N) device with Sb:F:SnO 2 AR layer. Results of optical and electrical studies show that the films are well suited for thin film solar cell as a window layer.

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Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

Raj

Santos

Rougieux

et al. 2018

J. Phys. D: Appl. Phys.

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According to the Shockley-Queisser limit, the maximum achievable efficiency for a single junction solar cell is ~33.2% which corresponds to a bandgap (E g) of 1.35 eV (InP). However, the maximum reported efficiency for InP solar cells remain at 24.2% ± 0.5%, that is >25% below the standard Shockley-Queisser limit. Through a wide range of simulations, we propose a new device structure, ITO/ ZnO/i-InP/p + InP (p-i-ZnO-ITO) which might be able to fill this efficiency gap. Our simulation shows that the use of a thin ZnO layer improves passivation of the underlying i-InP layer and provides electron selectivity leading to significantly higher efficiency when compared to their n + /i/p + homojunction counterpart. As a proof-of-concept, we fabricated ITO/ZnO/i-InP solar cell on a p + InP substrate and achieved an open-circuit voltage (V oc) and efficiency as high as 819 mV and 18.12%, respectively, along with ~90% internal quantum efficiency. The entire device fabrication process consists of four simple steps which are highly controllable and reproducible. This work lays the foundation for a new generation of thin film InP solar cells based solely on carrier selective heterojunctions without the requirement of extrinsic doping and can be particularly useful when p-and n-doping are challenging as in the case of III-V nanostructures.

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Effects of interfacial oxide layer thickness and interface states on conversion efficiency of SnO2/ SiO2/Si(N) solar cells

Cited by 7 publications

References 11 publications

Computational Study of Hybrid Nanomaterial/Insulator/Silicon Solar Cells

Computational Study of Hybrid Nanomaterial/Insulator/Silicon Solar Cells

Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films

Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

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