2014
DOI: 10.1103/physrevb.90.155132
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Effects of inter-vanadium distance andA-site magnetism inAV2O4(A

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Cited by 14 publications
(10 citation statements)
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“…The conven tional distortion parameter c/a (=c T /a T √2) at 10 K changes from 0.989 to 0.994 on increasing the pressure from 2.5 GPa to 5 GPa indicating lowering of distortion on increase of pres sure. A similar behavior is observed in the doping studies by non magnetic dopants in AV 2 O 4 compounds[8]. The tetrag onal distortion and activation energy (E a ) obtained from conductivity studies are found to be correlated.…”
supporting
confidence: 80%
See 1 more Smart Citation
“…The conven tional distortion parameter c/a (=c T /a T √2) at 10 K changes from 0.989 to 0.994 on increasing the pressure from 2.5 GPa to 5 GPa indicating lowering of distortion on increase of pres sure. A similar behavior is observed in the doping studies by non magnetic dopants in AV 2 O 4 compounds[8]. The tetrag onal distortion and activation energy (E a ) obtained from conductivity studies are found to be correlated.…”
supporting
confidence: 80%
“…The V-V distance in this system can be influenced by either varying the size of A 2+ ion or by applying external pressure. Additionally, the AB interaction in AB 2 O 4 compounds is also found to influ ence the approach to itinerant behavior [8]. BlancoCanosa et al [1] have shown with the help of pressure dependent magnetization measurements that there exists an enhanced pressure dependence of T N in these AV 2 O 4 compounds.…”
Section: Introductionmentioning
confidence: 99%
“…For example, the resistivity and X-ray diffraction (XRD) studies on Mn 1−x Co x V 2 O 4 show that with increasing Codoping, the system approaches the itinerant electron limit with decreasing resistivity [33]. Around x = 0.8, the system shows no structural phase transition down to 10 K [33,34]. Recently, the neutron scattering experiments and first principle calculations have revealed that the strong competition between the orbital ordering and itinerancy in Mn 1−x Co x V 2 O 4 is the key factor for its complex magnetic and structural phase diagram.…”
Section: Introductionmentioning
confidence: 99%
“…At this temperature the structure is converted from a tetragonal phase with a high thermal conductivity to a cubic phase with a lower one. [ 56,71 ] The authors observed a thermal rectification of RR = 14% for a temperature span between 55.4 K (heat sink) and 57.4 K (heat source), which can be considered as a high value considering the small thermal bias below 2 K. [ 56 ] Additionally, Garcia‐Garcia and Alvarez‐Quintana [ 72 ] investigated the thermal rectification in a nitinol/graphite PCM thermal diode. In this case, nitinol was used as the PCM and graphite as the PIM.…”
Section: Thermal Diodesmentioning
confidence: 99%