Effects of Indium-Tin-Oxide Surface Treatment on Organic Light-Emitting Diodes

Park, No Gill; Kwak, Mi Young; Kim, Bong Ok; Kwon, Oh Kwan; Kim, Young Kwan; You, Bora; Kim, Tae Wan

doi:10.1143/jjap.41.1523

Cited by 57 publications

(18 citation statements)

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“…All devices showed almost the same turn‐on voltage (about 2.2 V) which was defined at 1 cd m −2 . Current and power efficiencies at 1000 cd m −2 were also similar (10.4–10.6 cd A −1 , 7.1–8.0 lm W −1 ) although there is slight difference in their profiles, which, we believe, came from difference of device structures and physics such as energy barrier, charge injection and interface property, and top and bottom‐emission characteristics. It should be noted that each device structure was optimized to achieve the best device performances.…”

Section: Resultsmentioning

confidence: 64%

Highly Customizable All Solution–Processed Polymer Light Emitting Diodes with Inkjet Printed Ag and Transfer Printed Conductive Polymer Electrodes

Park

Yoon

Kim

et al. 2019

Adv Funct Materials

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Inkjet and transfer printing processes are combined to easily form patterned poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films as top anodes of all solution-processed inverted polymer light emitting diodes (PLEDs) on rigid glass and flexible plastic substrates. An adhesive PEDOT:PSS ink is formulated and fully customizable patterns are obtained using the inkjet printing process. In order to transfer the patterned PEDOT:PSS films, adhesion properties at interfaces during multistep transfer printing processes are carefully adjusted. The transferred PEDOT:PSS film on the plastic substrates shows not only a sheet resistance of 260.6 Ω/□ and a transmittance of 92.1% at 550 nm wavelength but also excellent mechanical flexibility. The PLEDs with spin-coated functional layers sandwiched between the transferred PEDOT:PSS top anodes and inkjet-printed Ag bottom cathodes are fabricated. The fabricated PLEDs on the plastic substrates show a high current efficiency of 10.4 cd A −1 and high mechanical stability. It is noted that because both Ag and PEDOT:PSS electrodes can be patterned with a high degree of freedom via the inkjet printing process, highly customizable PLEDs with various pattern sizes and shapes are demonstrated on the glass and plastic substrates. Finally, with all solution process, a 5 × 7 passive matrix PLED array is demonstrated.

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Section: Resultsmentioning

confidence: 64%

Highly Customizable All Solution–Processed Polymer Light Emitting Diodes with Inkjet Printed Ag and Transfer Printed Conductive Polymer Electrodes

Park

Yoon

Kim

et al. 2019

Adv Funct Materials

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“…[1,2] ITO films are deposited by the radio frequency magnetron sputtering, direct current magnetron sputtering, chemical vapor deposition, spray pyrolysis, pulsed laser deposition, and electron beam method [3,4].…”

Section: Introductionmentioning

confidence: 99%

Properties of Indium Tin Oxide on Polymer Films Deposited by Low-Frequency Magnetron Sputtering Method

Jung

Kim

Sohn

et al. 2006

Molecular Crystals and Liquid Crystals

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In this study, we introduce indium tin oxide (ITO) thin films grown by using lowfrequency (60 Hz) magnetron sputtering method. Characteristics of the ITO thin films deposited on polyethersulfone (PES) substrates are investigated. Experiments were carried out as a function of deposition time and substrate temperature. ITO thin films on PES substrate revealed amorphous structure. The optical transmittance, the sheet resistance and the resistivity of the films decreased with the increasing deposition time. The sheet resistance and the roughness of the films increased with the increasing substrate temperature. Roughness values of ITO films on PES substrate deposited at various substrate temperatures are Ra ( < 2 nm), Rms (< 3 nm) and Rp-v (< 10 nm). The experimental results confirm that the films with good qualities in surface morphology, transmittance and electrical conduction can be grown by a low-frequency magnetron sputtering method.

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“…Calculations on the electronic ground states of the Ir(III) complexes have been carried out by using the same calculation method and Los Alamos ECP plus DZ on Na-Bi (LANL2DZ) basis set for Ir atom. Excitation energies of triplet and singlet states were calculated from the time dependent density functional theory (TD-DFT) utilizing the B3LYP functional with the 6-31G(d) basis set [13,14]. The electronic populations on the central atom were calculated to show the significant admixture of ligand p character with the amount of metal 5d character in the occupied molecular orbitals related to those MLCT transitions.…”

Section: Methodsmentioning

confidence: 99%