Effects of In2O3 modification of sprayed multiwalled carbon nanotubes for pH-sensing applications

Huang, Bohr–Ran; Hung, Shang-Chao; Lo, Yuan-Pin

doi:10.1016/j.mssp.2014.06.033

Cited by 9 publications

(3 citation statements)

References 24 publications

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“…Compared to the previous device fabricated by using various materials as the sensing membrane, the In 0.9 Ga 0.1 O membrane used in this work and revealed good properties was one of the potential materials as the sensing membrane of EGFET pH sensors. To realize In 0.9 Ga 0.1 O membrane properties for pH sensing application, the stability of the In 2 O 3 based and InGaO based sensing membrane was published in the previous study [24,36]. The In 2 O 3 based pH-EGFET was reported by B. R. Huang et al, it confirms the immediate response of the pH was changed from 2 to 12 in steps of 2 pH units [36].…”

Section: Resultsmentioning

confidence: 85%

“…To realize In 0.9 Ga 0.1 O membrane properties for pH sensing application, the stability of the In 2 O 3 based and InGaO based sensing membrane was published in the previous study [24,36]. The In 2 O 3 based pH-EGFET was reported by B. R. Huang et al, it confirms the immediate response of the pH was changed from 2 to 12 in steps of 2 pH units [36]. The stability of InGaO based electrolyte-insulator-semiconductor (EIS) was reported by C. H. Kao et al [24], it was evaluated with pH sequence of 7, 4, 7, 10, and 7.…”

Section: Resultsmentioning

confidence: 99%

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Fabrication and Characterization of In0.9Ga0.1O EGFET pH Sensors

2021

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In this study, the In0.9Ga0.1O sensing membrane were deposited by using the RF magnetron sputtering at room temperature and combined with commercial MOSFETs as the extended gate field effect transistor (EGFET) pH sensors. The sensing performance of the In0.9Ga0.1O EGFET pH sensors were measured and analyzed in the pH value of range between 2 to 12. In the saturation region, the pH current sensitivity calculated from the linear relationship between the and pH value was approximately 56.64 μA/pH corresponding to the linearity of 97.8%. In the linear region, the pH voltage sensitivity exhibited high sensitivity and linearity of 43.7 mV/pH and 96.3%, respectively. The In0.9Ga0.1O EGFET pH sensors were successfully fabricated and exhibited great linearity. The analyzed results indicated that the In0.9Ga0.1O was a robust material as a promising sensing membrane and effectively used for pH sensing detection application.

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Section: Resultsmentioning

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Fabrication and Characterization of In0.9Ga0.1O EGFET pH Sensors

2021

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“…In previous investigation of EGFET, researchers developed and investigated various sensing films such as tin oxide (SnO 2 ) [5], zinc oxide (ZnO) [6], vanadium oxide (V 2 O 5 ) [6], and carbon-nanotube (CNT) [7] for EGFET. All of these materials were used as pH-sensitive materials due to their higher sensitivity towards pH.…”

Section: Introductionmentioning

confidence: 99%

Annealing temperature effect on the electrical characteristics and pH sensitivity of TiO<inf>2</inf>/ZnO bilayer films

Rahman

Zulkefle

Rusop

et al. 2015

2015 International Symposium on Technology Management and Emerging Technologies (ISTMET)

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The effect of annealing temperature on the surface morphology and electrical properties of composite bilayer, TiO 2 /ZnO were studied in this investigation. The composite thin films were applied as the sensing membrane of an Extended Gate Field-Effect Transistor (EGFET) based pH sensor. TiO 2 and ZnO were deposited on Indium Tin Oxide (ITO) by using sol-gel spin-coating process. The effects of the varied parameter on the sensor sensitivity and linearity were also investigated. The sensitivity of the TiO 2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. In addition, these thin films were characterized by using Field Emission Scanning Electron Microscope (FESEM) to obtain the surface morphology of the composite thin films. Meanwhile, I-V measurement was done in order to determine the electrical properties of the thin films. According to the result obtained in this experiment, thin film that annealed at highest temperature, which is 500⁰C produced highest sensitivity, 53.3 mV/pH. Relating the I-V characteristic of the thin films and sensitivity, the sensing membrane with higher conductivity gave better sensitivity. Keywords-TiO 2/ ZnO bilayer; EGFET pH sensor; annealing temperature effecttI.

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Microelectronic sensor for continuous glucose monitoring

Nascimento

Mulato

2019

Appl. Phys. A

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Effects of In2O3 modification of sprayed multiwalled carbon nanotubes for pH-sensing applications

Cited by 9 publications

References 24 publications

Fabrication and Characterization of In0.9Ga0.1O EGFET pH Sensors

Fabrication and Characterization of In0.9Ga0.1O EGFET pH Sensors

Annealing temperature effect on the electrical characteristics and pH sensitivity of TiO<inf>2</inf>/ZnO bilayer films

Microelectronic sensor for continuous glucose monitoring

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