2019
DOI: 10.1016/j.physb.2018.10.031
|View full text |Cite
|
Sign up to set email alerts
|

Effects of impurity band in heavily doped ZnO:HCl

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 8 publications
(1 citation statement)
references
References 36 publications
(56 reference statements)
0
1
0
Order By: Relevance
“…If the defects and impurities energy states are placed energetically far from the CB, and the VB, a metallic band made of impurity states can arise inside the bandgap . It has been suggested that carriers in the impurity band should have similar spectral features as the free carriers in the VB and CB. If carriers inside the impurity band are considered analogous to free carriers, a simple mechanism can be devised to justify the measured negative component: when carriers in the impurity band are excited into localized states, the free carrier density decreases and, therefore, also does the free carrier absorption. This model could also explain literature data showing a decrease in the width of the acceptor band (V Cu ) in CuI with increasing heat-treatment temperatures .…”
mentioning
confidence: 99%
“…If the defects and impurities energy states are placed energetically far from the CB, and the VB, a metallic band made of impurity states can arise inside the bandgap . It has been suggested that carriers in the impurity band should have similar spectral features as the free carriers in the VB and CB. If carriers inside the impurity band are considered analogous to free carriers, a simple mechanism can be devised to justify the measured negative component: when carriers in the impurity band are excited into localized states, the free carrier density decreases and, therefore, also does the free carrier absorption. This model could also explain literature data showing a decrease in the width of the acceptor band (V Cu ) in CuI with increasing heat-treatment temperatures .…”
mentioning
confidence: 99%