Effects of hydrostatic pressure on donor states in symmetrical GaAs–Ga0.7Al0.3As double quantum wells

Polaronic excitons in a double-quantum-well semiconductor heterostructure

“…The donor binding energy is still reduced when the impurity is at the barrier centre. The results are in very good agreement with other results obtained [2,11,23]. Fig.…”

“…In earlier work, Okan et al [10] investigated the exciton transition energies in symmetric double GaAs/GaAlAs quantum wells. Raigoza et al [11] investigated the transition energy lying in the infrared range of the spectrum in a finite double-quantum-well model. And they found that beyond 60 kbar, it could fall within the visible range of the electromagnetic spectrum.…”

Comparison of Ga1−xAlxAs/GaAs and Ga1−xlnxAs/GaAs quantum wells as dependent on Al and In concentrations under intense laser field

“…[1][2][3][4][5][6][7][8][9][10] The segregation of indium atoms in GaInAs layer has been widely studied recently, because the realization of high-performance devices requires abrupt heterointerfaces. 11-16 It has been reported that indium atoms segregate to the growth surface during the MBE growth of GaInAs/GaAs heterostructure, and strongly depends on the growth temperature.…”

Donor-related optical absorption spectra for a GaAs-Ga0.7Al0.3As double quantum well under hydrostatic pressure and applied electric field effects

“…Several studies about the effects of an external electric field and hydrostatic pressure on the binding energy and density of impurity states associated with shallow donors and acceptors in GaAs − Ga 1−x Al x As semiconductor heterostructures, have been performed. Theoretical studies for donor-and acceptor-related optical-absorption and PL spectra in low dimensional systems have reported the presence of well defined structures related to on center and on edge impurities [1][2][3][4][5][6][7].…”