2015
DOI: 10.7566/jpsj.84.064716
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Effects of Hydrogen on the Electronic State and Electric Conductivity of the Rutile TiO2(110) Surface

Abstract: The adsorption of atomic hydrogen on a rutile TiO 2 (110) surface was investigated by nuclear reaction analysis (NRA), ultraviolet photoelectron spectroscopy (UPS), and conductivity measurements. The TiO 2 (110) surface was annealed in O 2 of 1 × 10 −4 Pa, which is regarded as a quasi-stoichiometric surface. After exposure to atomic hydrogen, UPS showed a localized in-gap state (IGS) at about 0.8 eV below the Fermi level and downward band bending with a decrease in the work function. Along with these changes, … Show more

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Cited by 21 publications
(24 citation statements)
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“…Since the monolayer (ML(O b )) of bridging oxygen row is 5 10 14 cm −2 , the creation of 0.1 ML(O b ) would require an exposure of 1.1 10 6 s which is already ∼ 500 times the longest exposure performed in our experiments. Indeed, literature shows that to obtain significant effect of atomic hydrogen on TiO 2 by dissociation on heated tungsten, exposures that are orders of magnitude above ours are required 25,26 .…”
Section: Surface Annealing With a Filamentmentioning
confidence: 78%
“…Since the monolayer (ML(O b )) of bridging oxygen row is 5 10 14 cm −2 , the creation of 0.1 ML(O b ) would require an exposure of 1.1 10 6 s which is already ∼ 500 times the longest exposure performed in our experiments. Indeed, literature shows that to obtain significant effect of atomic hydrogen on TiO 2 by dissociation on heated tungsten, exposures that are orders of magnitude above ours are required 25,26 .…”
Section: Surface Annealing With a Filamentmentioning
confidence: 78%
“…The UPS spectrum for the clean quasi‐stoichiometric surface of rutile TiO 2 (110) is shown by the black dotted line in Figure (a) . A large intensity ranging from 3 to 9 eV binding energy corresponds to the valence band mainly originating from the O 2p state, and there exists little intensity extending from E F to 3 eV, which represents the band gap.…”
Section: Electronic Effects Of Hydrogen On Oxide Surfacesmentioning
confidence: 99%
“…It is noted that OH species are also produced by dissociative adsorption of water at an oxygen vacancy site . The presence of hydrogen and its coverage on the surface are unambiguously determined by NRA, which reveals a surface peak corresponding to a saturation coverage of 0.62 ML . A saturation coverage of lower than 1ML is due to the effective repulsion between the partially positively charged adsorbates at a high coverage .…”
Section: Electronic Effects Of Hydrogen On Oxide Surfacesmentioning
confidence: 99%
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“…2 The reduction of TiO 2 and the production of oxygen vacancies or Ti 3+ , which modify the electronic structure, can be easily caused by vacuum annealing, hydrogen adsorption, electron irradiation, ultraviolet light irradiation, or exposure to molecular or atomic hydrogen. [13][14][15][16] Among these procedures, the exposure to atomic hydrogen is expected to reduce the TiO 2 surface effectively. In this paper, the blackening of the TiO 2 nanoparticles by exposing to atomic hydrogen was studied at various sample temperatures and ambient H 2 pressures.…”
Section: Introductionmentioning
confidence: 99%