Effects of hydrogen implantation on the photoluminescence and carrier mobility of ZnO films

Hamby, D. W.; Lucca, D.A.; Lee, Jung‐Kun; Nastasi, M.; Kang, Hong Seong; Lee, S.Y.

doi:10.1016/j.nimb.2006.03.113

Cited by 8 publications

(2 citation statements)

References 17 publications

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“…The majority of the earlier works aim for implantation related effects of hydrogen in ZnO with low energy (∼keV) ion beams [8][9][10]. Hydrogen is known to passivate zinc and oxygen vacancy defects and improve the near band edge photoluminescence in ZnO [11].…”

Section: Introductionmentioning

confidence: 99%

Defects in 6 MeV H⁺irradiated hydrothermal ZnO single crystal

Sarkar¹,

Chakrabarti

Bhowmick

et al. 2013

J. Phys.: Condens. Matter

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The effect of 6 MeV H(+) irradiation on hydrothermally grown ZnO single crystal has been investigated using high resolution x-ray diffraction (HRXRD) and optical absorption (ultraviolet-visible) spectroscopy. The increase of the diffuse scattering in the reciprocal space maps measured using HRXRD indicates an increase of the point defect density upon irradiation. Within the penetration depth of x-rays of several micrometres, the defect density increased with increasing distance from the sample surface. On the other hand, the near band gap optical absorption became sharper for the irradiated crystal. This reflects enhanced band to band absorption and reduced sub-band gap absorption due to defects. Temperature dependent photoluminescence spectra of the pristine sample show negative thermal quenching (NTQ) of the luminescence which is due to the presence of two or more donor related defects. Upon irradiation, a single dominant donor bound transition can be found without any temperature induced NTQ. Enhancement of the band edge luminescence and reduction of the defect related luminescence is observed at 10 K. Such changes have been discussed in the light of the hydrogen present in the as-grown state of hydrothermal ZnO.

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Section: Introductionmentioning

confidence: 99%

Defects in 6 MeV H⁺irradiated hydrothermal ZnO single crystal

Sarkar¹,

Chakrabarti

Bhowmick

et al. 2013

J. Phys.: Condens. Matter

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“…In the literature, low energy H + ion implantation has been used to study the doping effects of hydrogen in ZnO [10][11][12][13][14]. In contrast, there exist limited reports [9,15,16] on high energy H + induced damage in ZnO.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and positron annihilation spectroscopic investigation on a H⁺irradiated ZnO single crystal

Sarkar¹,

Chakrabarti

Sanyal

et al. 2012

J. Phys.: Condens. Matter

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Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

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