Effects of humidity on the electronic properties of graphene prepared by chemical vapour deposition

Melios, Christos; Centeno, Alba; Zurutuza, Amaia; Panchal, Vishal; Giusca, Cristina E.; Spencer, Steve J.; Silva, S. Ravi P.; Kazakova, Olga

doi:10.1016/j.carbon.2016.03.018

Cited by 55 publications

(79 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast with epitaxial graphene on SiC, the QFS 1LG is intrinsically p-doped (nh=6.43×10 12 cm -2 ) under ambient conditions, due to the spontaneous polarisation of the 4H-SiC substrate [91], [92]. CVD graphene on Si/SiO2 is also p-doped in ambient (nh=1.85×10 13 cm -2 ), due to charges in the underlying native oxide [29]. Following vacuum annealing, airborne contaminants are desorbed from the graphene surface, increasing the electron concentration to ne=1.18×10 13 cm -2 for the case of epitaxial graphene on SiC, while for both QFS 1LG and CVD graphene the hole concentration decreases to nh=1.67×10 12 cm -2 and nh=8.15×10 12 cm -2 [29], respectively.…”

Section: Water Effects On Global Transport Properties Of Graphenementioning

confidence: 99%

“…CVD graphene on Si/SiO2 is also p-doped in ambient (nh=1.85×10 13 cm -2 ), due to charges in the underlying native oxide [29]. Following vacuum annealing, airborne contaminants are desorbed from the graphene surface, increasing the electron concentration to ne=1.18×10 13 cm -2 for the case of epitaxial graphene on SiC, while for both QFS 1LG and CVD graphene the hole concentration decreases to nh=1.67×10 12 cm -2 and nh=8.15×10 12 cm -2 [29], respectively. This demonstrates that in all three types of graphene, atmospheric contaminants act as p-dopants.…”

Section: Water Effects On Global Transport Properties Of Graphenementioning

confidence: 99%

“…Carrier type p-type [29], [103] n-type [83], [90] p-type [83], [91], [92] Total carrier concentration change 0-60% R.H. 2LG stacking Weakly coupled [101], [102] AB-stacked [104] AB-stacked [104] Hydrophilicity of 1LG and 2LG…”

Section: Qfs 1lg On Sic(0001)mentioning

confidence: 99%

See 2 more Smart Citations

Water on graphene: review of recent progress

et al. 2018

View full text Add to dashboard Cite

The sensitivity of graphene to the surrounding environment is given by its π electrons, which are directly exposed to molecules in the ambient. The high sensitivity of graphene to the local environment has shown to be both advantageous but also problematic for graphene-based devices, such as transistors and sensors, where the graphene carrier concentration and mobility change due to ambient humidity variations. In this review, recent progress in understanding the effects of water on different types of graphene, grown epitaxially and quasi-free standing on SiC, by chemical vapour deposition on SiO2, as well as exfoliated flakes, are presented. It is demonstrated that water withdraws electrons from graphene, but the graphene-water interaction highly depends on the thickness, layer stacking, underlying substrate and substrate-induced doping. Moreover, we highlight the importance of clear and unambiguous description of the environmental conditions (i.e. relative humidity) whenever a routine characterisation for carrier concentration and mobility is reported (often presented as a simple figure-of-merit), as these electrical characteristics are highly dependent on the adsorbed molecules and the surrounding environment.

show abstract

Section: Water Effects On Global Transport Properties Of Graphenementioning

confidence: 99%

Section: Water Effects On Global Transport Properties Of Graphenementioning

confidence: 99%

See 1 more Smart Citation

Water on graphene: review of recent progress

et al. 2018

View full text Add to dashboard Cite

show abstract

“…D band corresponds to disordered structure in graphene, especially at the edges of the graphene sheets. The G peak originates from the first-order scattering process due to the double degenerate phonon mode vibrations at the center of Brillouin zone and is related to sp 2 bonded carbon [45]. Measurement of D / G ratio is a well-known method for characterization of disorder [46,47].…”

Section: Raman Spectroscopymentioning

confidence: 99%

Graphene Synthesis Using a CVD Reactor and a Discontinuous Feed of Gas Precursor at Atmospheric Pressure

Moreno-Bárcenas

Pérez-Robles

Vorobiev

et al. 2018

Journal of Nanomaterials

View full text Add to dashboard Cite

The present work shows a new method in order to cost-effectively achieve the synthesis of graphene by Chemical Vapor Deposition (CVD). Unlike most usual processes, where precursors such as argon, H 2 , CH 4 , and high purity copper foil are used, the proposed method has replaced the previous ones by N 2 , N 2 (90%) : H 2 (10%), C 2 H 2 , and electrolytic copper (technical grade) since the use of industrialized precursors helps reduce production costs. On the other hand, the process was modified from a continuous flow system with vacuum to a discontinuous one at atmospheric pressure, eliminating the use of vacuum pump. In addition, this modification optimized the consumption of gases, which reduced the waste and the emission of pollutant gases into the atmosphere. Graphene films were grown under different gas flowrates and temperatures. Then, the obtained material was characterized by TEM, Raman spectroscopy, and AFM, confirming the presence of few graphene layers. In brief, the growth time was reduced to six minutes with acetylene as a carbon precursor at 1000 ∘ C and at atmospheric pressure, with a flow rate of 30 sccm. Finally, the reported conditions can be used for the synthesis of good quality graphene films in industrial applications.

show abstract

“…Aer monolayer graphene was successfully prepared by the micro-mechanical peeling method, 27 a variety of preparation methods have been reported, such as the oxidation-reduction method, [28][29][30] chemical vapor deposition, [31][32][33] and chemical synthesis. [34][35][36] In particular, the oxidation-reduction method can efficiently prepare graphene under relatively mild conditions, and the defects and residual oxygen functional groups on the reduction products can improve the activity of the reduced graphene oxide (rGO), which is benecial for expanding its application range.…”

Section: -26mentioning

confidence: 99%

Solvent-assisted thermal reduction of microcrystalline graphene oxide with excellent microwave absorption performance

et al. 2018

View full text Add to dashboard Cite

aTo prepare a new kind of electromagnetic wave absorber, and improve the processing technology and accessional value of natural microcrystalline graphite minerals (NMGMs), reduced microcrystalline graphene oxide (rGO-M), a novel absorber with high absorption, low reflection and a wide absorption band, was prepared from NMGMs using a solvent-assisted thermal reduction method. Moreover, the asproduced rGO-M with adjustable electrical resistivity can be easily transferred into well distributed bulk materials by freeze-drying technology. These unique structures and compositions make a great contribution to the impedance match, and cause strong conductive loss and various dipole polarization effects which greatly enhance the absorption. Meanwhile, the effective bandwidths below À5 dB and À10 dB are 11.7 GHz and 3.32 GHz respectively, and the reflection loss can reach À42.68 dB. The study will be beneficial to the development of carbon resources and carbon materials research. Besides, it can provide a scientific basis for the further improvement of the comprehensive utilization and the level of deep processing technology of NMGM resources.

show abstract

Effects of humidity on the electronic properties of graphene prepared by chemical vapour deposition

Cited by 55 publications

References 40 publications

Water on graphene: review of recent progress

Water on graphene: review of recent progress

Graphene Synthesis Using a CVD Reactor and a Discontinuous Feed of Gas Precursor at Atmospheric Pressure

Solvent-assisted thermal reduction of microcrystalline graphene oxide with excellent microwave absorption performance

Contact Info

Product

Resources

About