Effects of high dose gamma irradiation on ITO thin film properties

Structural and Optical Properties of TIPS Pentacene Thin Film Exposed to Gamma Radiation

“…It decreased from 70% to 55% in the wavelength region of 380 to 700 nm 39 . The reduction in transmittance with a higher dose is due to the surface and lattice defects produced via radiation (voids and pores) 9 . The higher vacancy defects simultaneously increase its absorbance.…”

“…Hence, it becomes a major factor contributing to the components' ability to function properly in harsh radiation environments. Interaction of ionizing radiation with matter, especially gamma radiation, is crucial in both theoretical and practical [4][5][6][7][8][9] . Hence, the effect of gamma radiation on the structural, optical and electrical properties of various organic thin films and semiconductor electronics was widely investigated.…”

“…Although several technological applications of TIPS Pentacene exist in microelectronics [19][20][21][22] , it is quite unreliable under harsh radiation environments. In particular, the current knowledge of the radiation response of TIPS Pentacene-based devices is unclear, and the physical effects of the radiation in harsh environments are unknown 4,9 . Hence, this study investigates the physical and optical characteristics of TIPS Pentacene organic thin film upon exposure to gamma irradiation.…”

Indium tin oxide thin film preparation and property relationship for humidity sensing: A review

“…ITO thin films have been prepared using various methods, such as dip coating method, [1][2][3][4][5][6][7] DC magnetron sputtering, [8][9][10][11][12][13][14] radio frequency (RF) sputtering, [15][16][17][18][19][20][21][22][23][24] spin coating, [25][26][27][28][29][30][31][32][33][34] direct and thermal evaporation, [35][36][37] electron beam (EB) evaporation, [38][39][40][41][42] pulsed laser deposition (PLD), [43][44][45] chemical vapor deposition, 46,47 microwave heating, 48,49 screen-printed process, [50]…”

Etchability Dependence of InOx and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

“…), frequently used in various optoelectronic device fabrication, are materials whose physical, structural and chemical properties are still subject of investigation in present times [2][3]. Indium oxide (InO x ) and indium tin oxide (ITO) thin films are TCO materials both with their own properties, strongly dependent upon their oxidation state (stoichiometry), quantity of impurities trapped in the film and film deposition processes and conditions [4].…”