Effects of hetero-related bulk-traps on photoresponse for long-wavelength HgCdTe infrared photodiode

Abstract

Effects of hetero-related bulk traps on photoresponse for long-wavelength Hg 1 x Cd x Te infrared photodiodes have been numerically studied. The model involves a generalized approach, taking into account absorption coefficient, trap-assisted and band-to-band tunneling recombination mechanism, and bulk traps distributions associated with misfit dislocations present in the GaAs-substrate/Hg 1 x Cd x Te hetero-structure. The characteristic x-dependent material parameters, used in the simulations, such as donor concentration, trap density and level, and minority lifetime, are extracted by the simultaneous-mode nonlinear fitting procedure.

Effects of crosstalk on photoresponse for mid-wavelength InSb infrared focal plane arrays

“…The carrier generation-recombination process consists of SRH, Auger, and optical generation-recombination terms. Additionally, tunneling effects, such as band-to-band and trap-assisted tunneling models, are included in the continuity equations by representing them as additional generation-recombination processes [9,10].…”