Abstract:The effects of 400 keV helium ion irradiation dose and temperature on the microstructure of the Ti3SiC2 ceramic were systematically investigated by grazing incidence x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The helium irradiation experiments were performed at both room temperature (RT) and 500 °C with a fluence up to 2.0 ×1017 He+/cm2 that resulted in a maximum damage of 9.6 displacements per atom. Our results demonstrate that He irradiations produce a large number… Show more
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