2009
DOI: 10.1364/ao.48.002505
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Effects of heat induced by two-photon absorption and free-carrier absorption in silicon-on-insulator nanowaveguides operating as all-optical wavelength converters

Abstract: We propose a new numerical model to analyze heat induced by two-photon absorption and free-carrier absorption, while high intensity optical pulses propagate along silicon-on-insulator (SOI) nanowaveguides (NWGs). Using this model, we demonstrate that such induced heat causes a shift in the amount of wavelength conversion and hence deteriorates the converter output characteristics for pulses in the picosecond regime. The wavelength shift induced by a pulse with maximum input intensity and full width at half-max… Show more

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Cited by 14 publications
(2 citation statements)
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“…The linear absorption is mostly causes by the surface roughness and leakage substrate of silicon. 35 The TPA is the absorption process that absorbs two photons energy by electron to excite from valence band into conduction band and required the phonon energy to provide momentum. This process is achieved when the total energy of photons is higher than the silicon indirect bandgap energy of 1.12 eV and the process is possible at the wavelength of 1.55 m. The TPA is a major limiting factor for SOI-PANDA waveguide because it creates free-carrier density or electron-hole pair (EHP) at conduction band due to the excitation of electrons from valence to conduction band.…”
Section: Resultsmentioning
confidence: 99%
“…The linear absorption is mostly causes by the surface roughness and leakage substrate of silicon. 35 The TPA is the absorption process that absorbs two photons energy by electron to excite from valence band into conduction band and required the phonon energy to provide momentum. This process is achieved when the total energy of photons is higher than the silicon indirect bandgap energy of 1.12 eV and the process is possible at the wavelength of 1.55 m. The TPA is a major limiting factor for SOI-PANDA waveguide because it creates free-carrier density or electron-hole pair (EHP) at conduction band due to the excitation of electrons from valence to conduction band.…”
Section: Resultsmentioning
confidence: 99%
“…These results imply that the free-carrier effects can be successfully employed to realize all FCA-and FCD-based device functionalities on a nanoscale that have been previously demonstrated on a centimeter scale with the SOI technology. These applications include all-optical switching [41][42][43][44][45], wavelength conversion [46], optical modulation [47,48], and pulse compression [49]. Similar estimations for the Kerr effect and TPA performed with Eq.…”
Section: Propagation Of Spps In the Quasi-cw Regimementioning
confidence: 92%