Abstract:A pulsed ion-beam evaporation (IBE) technique is used to ablate Si species from bulk Si target onto quartz substrates. Large round-shaped droplets up to a few µm are predominantly formed in vacuum, whereas introduction of He gas could result in formation of particles with decreased size up to a few hundreds nm. A slight oxidation of Si particles is found even in vacuum condition, revealed by surface composition analysis using X-ray photoelectron spectroscopy (XPS). Note that the presence of He ambient obviousl… Show more
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