Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE

Wang, Hongmei; Fan, Tie; Wu, Ju; Zeng, Yiping; Dong, Jianrong; Kong, Meiying

doi:10.1016/s0022-0248(97)00455-7

Cited by 13 publications

(4 citation statements)

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“…The limited In diffusion results in a difference in growth rates along the (001) and (111) faces due to the atomic density in these directions. The low growth temperature limits dislocation motion and increases yield strength 26,27 . Thus, structural deformation is more beneficial than the sliding and nucleation of the dislocations to mitigate stress caused by the lattice mismatch and induced by the low growth temperature.…”

Section: Resultsmentioning

confidence: 99%

InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

Kang

Geum

Kwak

et al. 2019

Sci Rep

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Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1–3 μm; however, they only capture a part of the region due to a cut-off wavelength of 1.7 μm. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick In x Al 1−x As graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of approximately 1.5–4 μm and its detectivity ( D * ) was 1.65 × 10 8 cm · Hz 1/2 · W −1 at 3.3 μm. To demonstrate performance, the Sherlock Holmes mapping images were obtained using the photodetector at room temperature.

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Section: Resultsmentioning

confidence: 99%

InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

Kang

Geum

Kwak

et al. 2019

Sci Rep

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“…These craters exhibited random size distribution and shape. This was in contrast to the previous reported pinhole defects shown in a highly mismatched layer where the pinhole defects had been caused by threading dislocations and low atomic migration rate [128]. These pinhole defects have a uniform size and are hexagonal in shape.…”

Section: Xrd and Afm Measurementcontrasting

confidence: 93%

Highly lattice-mismatched epitaxy for III-V/Si integration

Jia¹

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Indium antimonide (InSb) is a competitive semiconductor for the applications in high electron mobility transistor and mid-infrared photodetector. Integration of InSb on GaAs and Si substrates is promising for higher performance of the devices and lower cost of fabrication, and becomes an important component of opto-electronic integrated circuits. Therefore, much effort has been made to investigate the novel heteroepitaxial approaches to overcome the high lattice mismatch (14.6% for InSb/GaAs and 19.3% for InSb/Si) and different crystal structures between InSb and Si.The thesis focuses on the integration of InSb with Si using solid-state molecular beam epitaxy (MBE) system. First, interfacial misfit (IMF) array was intentionally formed at the InSb/GaAs interface to accommodate the lattice mismatch via surface anion exchange. The relationship between the growth temperature and the formation of IMF was investigated. Transmission electron microscope (TEM) images of the sample grown at 310 °C demonstrated an IMF array consisting of 90° misfit dislocations distributed uniformly along the interface and their separation (3.2 nm) agreed well with the calculated result. Growth temperature above 310 °C suppressed the surface anion exchange to impede the formation of IMF array. Below 310 °C, island coalescences resulted in the formation of threading dislocations.Further optimization of growth process has been focused on two areas: 1) pre-growth Sb reconstructions; and 2) in situ thermal annealing. Sb atoms have three kinds of reconstruction on GaAs surface and III-Sb (GaSb and InSb) layers grew on GaAs with different pre-growth Sb reconstructions. Our simulation demonstrated that the x-ray reciprocal space map (RSM) can be employed to characterize the distribution of misfit Summary viii dislocations in the IMF array. The results of RSM showed pre-growth (2×8) Sb reconstruction promoted the formation of 90° misfit dislocations in an IMF array. The highest carrier mobility of III-Sb layers was achieved in the III-Sb layers grown on GaAs with pre-growth (2×8) Sb reconstruction. The optimized anneal process was 5 minutes at 590 °C for GaSb and 15 minutes at 420 °C for InSb, respectively. Compared with asgrown III-Sb layers, the lower density of threading dislocations, flatter surface and higher carrier mobility were observed in the annealed samples. We confirmed that the annealing also improved the photoresponsivity of GaSb and InSb photoconductors grown on GaAs.To realize the integration of InSb on Si, GaAs buffer was grown on Ge-on-Si substrates with 6° offcut followed by InSb grown on GaAs via IMF array. An InSb p-i-n photodetector was developed based on this structure. An electron barrier layer was inserted into the conventional architecture of p-i-n photodetector to suppress the dark current. The electrical and optical properties of the photodetector were investigated. The photodetector owned a cutoff wavelength of about 5.3 μm at 80 K and the cutoff wavelength was found to increase with increasing temperature. The 80 K det...

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“…This suppression is attributed to an increase in the yield strength and limitation of the dislocation thread and glide, resulting from the decrease in growth temperature in the second phase. 25,26 The abrupt change in slope of the composition may contribute to the reduction in defects above point A because of the formation of a virtual interface which reflects defects. 27 To analyze the relationship between dislocations and strains of the InAlSb CGB layer, the lattice constants were compared along the growth direction by the constants from selected area electron diffraction (SAED) patterns.…”

Section: Resultsmentioning

confidence: 99%

“…This implies that the generation and glide of dislocations during the in-plane strain relaxation is suppressed. This suppression is attributed to an increase in the yield strength and limitation of the dislocation thread and glide, resulting from the decrease in growth temperature in the second phase. , The abrupt change in slope of the composition may contribute to the reduction in defects above point A because of the formation of a virtual interface which reflects defects …”

Section: Resultsmentioning

confidence: 99%

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer

Kang

Park²,

Shin³

et al. 2018

ACS Omega

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In this paper, we report the growth of a high-quality 100 nm thick InSb layer on a (001) GaAs substrate for InSb-based high-speed electronic device applications. A continuously graded buffer (CGB) technique with In x Al 1– x Sb was used to grow high-quality InSb films on GaAs substrates. The CGB layer was grown by continuously changing the growth temperature and composition of the aluminum and indium during the growth of the buffer layer. Degradation of electrical properties, which normally accompany carrier-defect scattering in a heteroepitaxial layer, was minimized by using the CGB layer. The electrical properties of the InSb films were characterized by Hall measurements, and the electron mobility of the 100 nm-thick InSb film had the largest value, of 39 290 cm 2 /V·s, among reports of similar thickness. To investigate the relationship between electrical and structural properties, the 100 nm thick InSb film was characterized by energy-dispersive spectroscopy and transmission electron microscopy.

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Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE

Cited by 13 publications

References 0 publications

InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

Highly lattice-mismatched epitaxy for III-V/Si integration

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer

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Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE

Cited by 13 publications

References 0 publications

InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

Highly lattice-mismatched epitaxy for III-V/Si integration

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer

Contact Info

Product

Resources

About

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer