Effects of growth temperature on electrical and structural properties of sputtered GaN films with a cermet target

Effect of Temperature Dependence on Electrical Characterization of <i>p-n</i> GaN Diode Fabricated by RF Magnetron Sputtering

“…As a result, they were found to be N d = 5.8 × 10 17 cm −3 and μ = 11 cm 2 /Vs for n-GaN film and N p = 2.1 × 10 17 cm −3 and μ = 26 cm 2 /Vs for p-GaN films. In our previous study on materials development, the band gap E g values of n-GaN deposited at 200˚C and p-GaN deposited at 400˚C were found to be 2.99 and 2.96 eV, respectively [12] [13].…”

“…Aluminum layer was sputtered at 200˚C for 30 min with a pure Al target. During Al deposition, only Ar gas was used at a flow rate of 5 sccm meanwhile the RF power was kept at 80 W. The detailed experimental procedure for depositing the GaN films can be referred to our previous work [12] [13].…”

“…The advantages of using the sputtering technique include lower deposition temperature, low equipment cost, and secure working atmosphere without using the toxic metalorganic precursors and ammonia [12]- [15]. In this study, the electrical I-V characteristics of p-n GaN diodes were determined by the thermionic emission (TE) modeat a wide testing temperature range of 25˚C -200˚C.…”

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

“…The advantages of using the sputtering technique include lower deposition temperature and equipment cost, and secure working atmosphere without using the toxic metal-organic precursors and ammonia [10,14,15]. In order to investigate the thermal stability, MOS Schottky diodes were deposited with the supports of RF sputtering and annealing at 400 1C.…”

Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20V

“…The advantages of using the sputtering technique include lower deposition temperature, low equipment cost, and secure working atmosphere without using the toxic metal-organic precursors and ammonia [10,11]. The current-voltage (I-V) characteristics of diodes at different testing temperatures were used to identify its performance.…”