Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si

Nozaki, Shinji; Noto, N.; Egawa, Takashi; Wu, A.T.; Soga, Tetsuo; Jimbo, Takashi

doi:10.1143/jjap.29.138

Cited by 16 publications

(9 citation statements)

References 9 publications

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“…Among them, the three-step growth method [16,17] and the dislocation filter layer (DFL) with multilayer quantum dots (QDs) [18][19][20] have obtained commendable experiment results. The threestep growth method is a modified two-step growth method by inserting an intermediate-temperature (IT) layer between the low-temperature (LT) layer and the hightemperature (HT) layer.…”

Section: Introductionmentioning

confidence: 99%

Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition

Wang

et al. 2016

Appl. Phys. A

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In this paper, metamorphic growth of GaAs on (001) oriented Si substrate, with a combination method of applying dislocation filter layer (DFL) and three-step growth process, was conducted by metal organic chemical vapor deposition. The effectiveness of the multiple InAs/ GaAs self-organized quantum dot (QD) layers acting as a dislocation filter was researched in detail. And the growth conditions of the InAs QDs were optimized by theoretical calculations and experiments. A 2-lm-thick buffer layer was grown on the Si substrate with the three-step growth method according to the optimized growth conditions. Then, a 114-nm-thick DFL and a 1-lm-thick GaAs epilayer were grown. The results we obtained demonstrated that the DFL can effectively bend dislocation direction via the strain field around the QDs. The optimal structure of the DFL is composed of three-layer InAs QDs with a growth time of 55 s. The method could reduce the etch pit density from about 3 9 10 6 cm -2 to 9 9 10 5 cm -2 and improve the crystalline quality of the GaAs epilayers on Si.

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Section: Introductionmentioning

confidence: 99%

Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition

Wang

et al. 2016

Appl. Phys. A

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“…In addition, a three-step growth, the modified two-step growth method in which an intermediate-temperature (IT) layer is added between LT and HT layer, was commonly employed in recent years [128,[141][142][143]. Nozaki et al [144] proposed and reported that the three-step growth method in GaAs-on-Si improved the surface morphology, as well as crystallinity. The detailed mechanism of this improvement was not clearly understood, but it was ascribed to the GaAs top layer grown at HT without direct contact to the LT nucleation layer.…”

Section: Nucleation and Iii-v Buffer Layermentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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“…In general, the dislocation density in AlGaAs grown on Si substrate increases with the Al content, and the quantum efficiency of AlGaAs solar cell on Si decreases. Many efforts [14][15][16][17][18][19] have been done to improve the crystal quality of GaAs and AlGaAs on GaAs, for many years. InGaP is also being investigated [20] as a material for top cell instead of AlGaAs.…”

Section: Other Activitiesmentioning

confidence: 99%

Development of new materials for solar cells in Nagoya Institute of Technology

Jimbo

Soga

Hayashi

2005

Science and Technology of Advanced Materials

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Solar cells with high efficiency and low price have long been desired, however, the commercially available solar cells are still expensive and the efficiencies of them are not high enough yet. A tandem solar cell was fabricated to develop a high-efficiency solar cell, and amorphous carbon solar cells were fabricated to develop a low-price solar cell.An AlGaAs/Si tandem solar cell was successfully fabricated by heteroepitaxial growth of AlGaAs on Si substrate. At first, a p-n junction was formed in Si substrate by the impurity diffusion method. Then, an AlGaAs p-n junction was grown by MOCVD. Since the AlGaAs p-n junction has a graded band gap emitter, the photo-excited minority carriers can be collected efficiently. The energy conversion efficiency of AlGaAs/Si tandem solar cell was 21.4% (AM0) in spite of large lattice mismatch and difference in thermal expansion coefficients between AlGaAs and Si. Solar cells were fabricated by using amorphous carbon films deposited by Ion Beam Sputtering and Pulse Laser Deposition (PLD). The highest efficiency of 1.82% (AM0) was attained with a-C(IBS)/p-C(pyrolysis)/p-Si structure. Solar cells using a-C:H were also fabricated by PLD and Plasma CVD, and the efficiencies of them were 2.1% (AM1.5) and 0.04% (AM0), respectively.Other research activities on solar cells in Nagoya Institute of Technology are briefly mentioned. q

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Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si

Cited by 16 publications

References 9 publications

Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition

Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition

Heteroepitaxial Growth of III-V Semiconductors on Silicon

Development of new materials for solar cells in Nagoya Institute of Technology

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