Effects of Growth Rate and III/V Ratio on Properties of AlN Films Grown on c-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Lim, Se Hwan; Shin, Eun-Jung; Lee, Hyo Sung; Han, Shuangfeng; Le, Duc C.; Hong, Seungwoo

doi:10.3740/mrsk.2019.29.10.579

Cited by 1 publication

(1 citation statement)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, the higher the Al amount, the more dislocations appear in practice yielding adverse effects on the required optical properties [15]. Besides, low mismatch percent for the layers is important in crystal growth and the AlGaN-based LED structure with the AlN buffer layer examined in this paper can be grown on sapphire (Al 2 O 3 ) as it is often reported in the literature [16][17][18][19][20]. The various difficulties encountered during the production process apart from the ones mentioned, such as point defects, cracking issues, low hole concentration, junction heating effect, and low light extraction efficiency (LEE) should not be ignored as well [7].…”

Section: Introductionmentioning

confidence: 93%

285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

Irem

Öner²,

Eroğlu

2023

Journal of Scientific Reports-A

View full text Add to dashboard Cite

In this paper, the systematic computational design process of AlGaN-based multiple quantum-well (QW) deep-ultraviolet (DUV) light-emitting diode (LED) grown on sapphire (Al2O3) substrate was investigated. An optimization was held to increase internal quantum efficiency (IQE) handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation (nextnano). As a determining factor, IQE was obtained to be 24% for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70% by a low threading dislocation density (TDD) and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 W/mm2 and 5.05 V, respectively.

show abstract