Effects of growth pressure on the structural and optical properties of multi quantum wells (MQWs) in blue LED

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

“…The mass spectrum of a nominally undoped ZnO nanowire is reported in Figure 2(c). The attribution of peaks in ZnO should take into account two facts: (i) the peak at 32 amu should be attributed to two different contributions, that of O 2 + and that of 64 Zn 2+ . The relative amount of the two contributions can easily be found by counting the heavier Zn 2+ isotopes contained in the peaks between 33 and 34 amu.…”

Correlation of Microphotoluminescence Spectroscopy, Scanning Transmission Electron Microscopy, and Atom Probe Tomography on a Single Nano-object Containing an InGaN/GaN Multiquantum Well System

“…They have a technological interest as building blocks of visible light-emitting diodes (LEDs) and laser diodes and have already been studied by APT. However, the previous APT studies were either purely structural − , or based on an approach comparing the electroluminescence of a whole device and the atom probe data . Only recently, a systematic study by Riley et al compared the correlated STEM and APT data obtained on different sets of InGaN/GaN QWs in nanowire LEDs with the spatially resolved cathodoluminescence (CL) spectra collected on other wires from the same sample.…”

Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

“…GaN materials are robust, with high thermal conductivity and high melting temperatures making them suitable for high current density devices such as SLEDs and semiconductor optical amplifiers. Indium gallium nitride (InGaN) QWs suffer from thickness variations [33], [34] and indium dislocation or clustering [35], [36] causing dot-like behavior [37], resulting in a density of states that lends itself to broad bandwidth applications. Additionally, strong polarization effects (both spontaneous and piezoelectric) result in large inbuilt fields that result in a forward bias significantly modifying the emission wavelength of the device.…”