Effects of Group III Cation Substitution in the Raman Spectra of Some Defective Chalcopyrites

Attolini, G.; Bini, S.; Lottici, Pier Paolo; Razzetti, C.

doi:10.1002/crat.2170270519

Cited by 14 publications

(19 citation statements)

References 18 publications

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“…The A 3 mode is much weaker than the other two, a feature that is also encountered in related compounds, such as ZnGa 2 Se 4 or CdGa 2 Se 4 . 13,18,19 In this plane the three A modes present, within experimental error, a constant intensity in parallel configuration, their small intensity in crossed configuration ͑below 5% of the parallel intensity͒ being attributable to a polarization leakage. Figures 3 and 4 show the rotational diagrams of the three A modes in ͑111͒ and ͑ 11 1 2 ͒ planes, respectively.…”

Section: Experimental Results and Interpretationmentioning

confidence: 61%

Raman selection rules in uniaxial media: The nonpolar modes ofMnGa2Se4

2005

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It is known that optically anisotropic media can change the polarization of light propagating inside them. As regards Raman spectroscopy, this affects the light intensity measured in different geometrical configurations and results in an apparent unfulfillment of selection rules. We present an experimental and theoretical study of such effects in the defect chalcopyrite semiconductor MnGa 2 Se 4 . Optical anisotropy is taken into account by including in the calculation of Raman intensities the phase difference appearing between ordinary and extraordinary waves as they propagate, in uniaxial media, with different velocities. Birefringence can be obtained from Raman measurements provided that the distance run by the light is known.

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Section: Experimental Results and Interpretationmentioning

confidence: 61%

Raman selection rules in uniaxial media: The nonpolar modes ofMnGa2Se4

2005

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“…[1][2][3][4] In particular, ZnGa 2 Se 4 has a high photosensitivity and strong luminescence, 2 can be used for phase change memories, 5 and has been proposed as a candidate for electronic device applications forming part of heterojunction diodes. 6 The properties of ZnGa 2 Se 4 have been characterized by x-ray diffraction (XRD), 7,8 neutron and electron diffraction, [9][10][11][12] extended x-ray absorption fine structure, 13 infrared (IR), 14,15 Raman spectroscopy, [15][16][17][18][19][20][21][22][23][24] and magnetic 25 measurements. To this respect, while some authors claim that ZnGa 2 Se 4 crystallizes in the tetragonal ordered defect chalcopyrite (DC) structure with space group (SG) I-4 [see Fig.…”

Section: Introductionmentioning

confidence: 99%

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Vilaplana

Gomis

Pérez-González

et al. 2013

Journal of Applied Physics

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High-pressure Raman scattering measurements have been carried out in ZnGa 2 Se 4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20 GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. V C 2013 AIP Publishing LLC.

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“…On the other hand, the vibrational properties of PS-CdIn 2 Se 4 at ambient conditions have been studied by means of Raman scattering and Infrared spectroscopy and many similarities with the vibrational modes of the ZB structure have been found [39][40][41][42] .…”

Section: Ternary Adamantinementioning

confidence: 99%

Structural and Vibrational Study of Pseudocubic CdIn₂Se₄ under Compression

Santamarı́a-Pérez

Gomis²,

Pereira³

et al. 2014

J. Phys. Chem. C

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We report a comprehensive experimental and theoretical study of the structural and vibrational properties of α-CdIn 2 Se 4 under compression. Angle-dispersive synchrotron x-ray diffraction and Raman spectroscopy evidence that this ordered-vacancy compound with pseudocubic structure undergoes a phase transition (7 GPa) towards a disordered rocksalt structure as observed in many other ordered-vacancy compounds. The equation of state and the pressure dependence of the Raman-active modes of this semiconductor have been determined and compared both to ab initio total-energy and lattice dynamics calculations and to related compounds. Interestingly, on decreasing pressure, at ~ 2 GPa, CdIn 2 Se 4 transforms into a spinel structure which, according to calculations, is energetically competitive with the initial pseudocubic phase. The phase behaviour of this compound under compression and the structural and compressibility trends in AB 2 Se 4 selenides are discussed.

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Effects of Group III Cation Substitution in the Raman Spectra of Some Defective Chalcopyrites

Cited by 14 publications

References 18 publications

Raman selection rules in uniaxial media: The nonpolar modes ofMnGa2Se4

Raman selection rules in uniaxial media: The nonpolar modes ofMnGa2Se4

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Structural and Vibrational Study of Pseudocubic CdIn₂Se₄ under Compression

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Effects of Group III Cation Substitution in the Raman Spectra of Some Defective Chalcopyrites

Cited by 14 publications

References 18 publications

Raman selection rules in uniaxial media: The nonpolar modes ofMnGa2Se4

Raman selection rules in uniaxial media: The nonpolar modes ofMnGa2Se4

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Structural and Vibrational Study of Pseudocubic CdIn2Se4 under Compression

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Structural and Vibrational Study of Pseudocubic CdIn₂Se₄ under Compression