Growth temperature effect of atomic-Layer-DepositeD Gdo x fiLms gadolinium oxide (gd 2 o 3 ) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. in this work, gdo x thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based gd precursor and water. As-grown gdo x film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick gdo x thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown gdo x film.