Effects of Grain Boundary and Counter Doping on P-Channel Polycrystalline Germanium Thin-Film Transistors via Continuous-Wave Laser Crystallization

Li, Y.-S.; Chen, C.-T.; Luo, Jun; Chuang, Kai Chi; Li, W.-S.; Hong, Cheng

doi:10.7567/ssdm.2019.g-2-03

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials 2019

DOI: 10.7567/ssdm.2019.g-2-03

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Effects of Grain Boundary and Counter Doping on P-Channel Polycrystalline Germanium Thin-Film Transistors via Continuous-Wave Laser Crystallization

Y.-S. Li¹,

C.-T. Chen²,

Jun Luo³

et al.

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Effects of Grain Boundary and Counter Doping on P-Channel Polycrystalline Germanium Thin-Film Transistors via Continuous-Wave Laser Crystallization

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