Effects of Grain Boundaries, Field-Dependent Mobility, and Interface Trap States on the Electrical Characteristics of Pentacene TFT

Observation of Unusual Homoepitaxy in Ultrathin Pentacene Films and Correlation with Surface Electrostatic Potential

“…[1][2][3][4][5][6] However, for all classes of organic semiconductors there remain significant open questions concerning the precise influences of microstructure on electrical performance. In the case of polycrystalline films, for example, the basic role of grain size on field effect mobility is still not conclusively established, with some reports describing a significant decrease in carrier mobility with smaller grain sizes, [20,21] and others reporting no significant dependence. [22][23][24] Much of the confusion in the literature likely results from differences in the specifics of experiments done in separate laboratories (e.g., substrate pretreatments).…”

Gate Dielectric Microstructural Control of Pentacene Film Growth Mode and Field‐Effect Transistor Performance

“…[25] Semiconductor grain boundaries are thought to be an important interfacial trap site disrupting charge transport in organic semiconductors. [26] Pentacene film growth via the island mode cannot readily yield a fully dense film, so that intercrystallite grain boundaries are likely to be a major factor limiting FET carrier mobility. However, when pentacene films are deposited at a lower T D (55 and 25°C) and the corresponding FETs are fabricated, the results are quite surprising (Fig.…”

High Performance Transistors in Low Mobility Organic Semiconductors for Analog and High-Frequency Applications

“…The effective density of the states (Nv) is set to be 10'9 cm3. Simulations based on these models and parameters have been shown to give good fits to the experimental data for OFETs [12]. As seen in Fig.…”