Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

Abstract

Investigation of optical anisotropy spectra in the R-plane (i. e., the [1012]-oriented layer plane) of GaN/Al 0.2 Ga 0.8 N quantum wells with different widths is studied. The optical matrix elements in the wurtzite quantum wells are calculated using the k•p finite difference scheme. The calculations show that the valence band mixing effect produces giant in-plane optical anisotropy in [1012]-oriented GaN/Al 0.2 Ga 0.8 N quantum wells with a narrow width. The nature of the in-plane optical anisotropy is found to be dependent on the well width. Specifically, it is found that the anisotropy changes from x-polarization to y-polarization as the well width increases.

ANALYSIS OF WAVE FUNCTION, ENERGY AND TRANSMISSION COEFFICIENTS IN GaN/ALGaN SUPERLATTICE NANOSTRUCTURES

“…Section 3 illustrates results of wave function intensities along with surface images for varying number of wells. Furthermore, results of transmission coefficients and energy have been discussed for superlattice structures of GaN/Al x Ga 1−x N [17][18][19].…”

Analysis of Wavefunction Distribution in Quantum Well Biased Laser Diode Using Transfer Matrix Method

“…Since, quantum confinement of carriers in semiconductor quantum wells [1][2][3][4][5][6][7] leads to quantized subband energies. Parallel to the effort concerning the fabrication and characterization of quantum wells, their theoretical modeling are developed with increasing level of sophistication, in order to enable the prediction of the physical properties of such structures and to enable a deeper understanding of experimental results.…”