Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Han, Shuangfeng; Lee, Hyo Sung; Lím, D.; Hong, Soon–Ku; Yoon, Nara; Oh, D. C.; Ahn, Byoung Jun; Song, Jung-Hoon; Yao, Takafumi

doi:10.1116/1.3562162

Cited by 3 publications

(1 citation statement)

References 26 publications

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“…Doped ZnO films are generally deposited by pulsed laser deposition (PLD) [44][45][46][47][48], magnetron co-sputtering [49][50][51][52][53][54][55], including direct current (DC) reactive and radio-frequency (RF), molecular beam epitaxy (MBE) [56][57][58][59][60], chemical vapor deposition [61,62] and sol-gel methods [63][64][65][66][67]. It is known that piezoelectricity is related to the crystallographic quality of ZnO films and high c-axis orientation can lead to good piezoelectricity of ZnO films [68][69][70][71][72].…”

Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

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In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn 2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn 0.975 V 0.025 O of 170 pC/N, Zn 0.94 Cr 0.06 O of 120 pC/N, Zn 0.913 Mn 0.087 O of 86 pC/N and Zn 0.988 Fe 0.012 O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO.The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn 2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn 2+ substitutes for Zn 2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.

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Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

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Morphology evolution of a-plane ZnO films on r-plane sapphire with growth by pulsed laser deposition

Peng

Tian

Wang

et al. 2013

Applied Surface Science

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Large degree of polarization of photoluminescence caused by anisotropic strain in nonpolar a-plane Mg_xZn_1−xO layers grown by plasma-assisted molecular beam epitaxy

et al. 2016

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A large degree of polarization (ρ) of photoluminescence (PL) approximate to 1 is obtained in each nonpolar a-plane Mg_xZn_1-xO layer grown by plasma-assisted molecular beam epitaxy (MBE) with x=0.01, 0.03, and 0.10, respectively. Anisotropic in-plane strains are selectively introduced by using foreign substrates and doping with different Mg contents, which strongly modify the valence band structures, leading to anisotropic optical properties. A polarized Raman measurement shows that anisotropic in-plane strains along the y and z axes increase with the increasing Mg contents. Polarized PL spectra show that ρ gradually increases to 0.97 with decreasing in-plane strains, resulting from an increasing difference in transition energy (ΔE) between E⊥c and E‖c caused by a lift of the degeneracy of valence band structures. The obtained highly polarized emission is close to linear polarized light, which is desirable in the backlighting of liquid crystal displays.

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Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Abstract: Articles you may be interested inElectron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

Cited by 3 publications

References 26 publications

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Morphology evolution of a-plane ZnO films on r-plane sapphire with growth by pulsed laser deposition

Large degree of polarization of photoluminescence caused by anisotropic strain in nonpolar a-plane Mg_xZn_1−xO layers grown by plasma-assisted molecular beam epitaxy

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